Electrical characterisation of CdTe/CdS photovoltaic devices

M. Wimbor , A. Romeo , Małgorzata Igalson

Abstract

Thin film solar cells based on CdTe/CdS are expected to become the base material for the low-cost and efficient large-scale solar energy conversion devices. The samples have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements in order to define the transport mechanism in heterostructure and basic electronic parameters. Trap-assisted tunnelling has been found to dominate carrier transport mechanism in the junction.
Author M. Wimbor
M. Wimbor,,
-
, A. Romeo
A. Romeo,,
-
, Małgorzata Igalson (FP / SD)
Małgorzata Igalson,,
- Semiconductors Division
Journal seriesOpto-Electronics Review, ISSN 1230-3402
Issue year2000
Vol8
No4
Pages375-377
Keywords in EnglishCapacitance; CdTe; Current-voltage characteristics
ASJC Classification2208 Electrical and Electronic Engineering; 3108 Radiation
URL http://www.scopus.com/inward/record.url?eid=2-s2.0-0346299266&partnerID=40&md5=b50a5e3c55f17633a438f376a0510892
Languageen angielski
Score (nominal)25
Score sourcejournalList
Publication indicators WoS Citations = 12; Scopus SNIP (Source Normalised Impact per Paper): 2000 = 0.439; WoS Impact Factor: 2006 = 0.617 (2) - 2007=0.789 (5)
Citation count*16 (2014-02-20)
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