Influence of post-deposition heat treatment on electrical transport properties of In2S3-buffered Cu(In,Ga)Se2 cells

Heba Abdel Maksoud , Małgorzata Igalson , S. Spiering


The electrical characteristics of Cu(In,Ga)Se2-based solar cells with In2S3 buffer were investigated. The effects of post-deposition annealing in helium or in air on current-voltage characteristics, net acceptor density profiles and admittance spectra were studied. Analysis of the current-voltage characteristics showed that interface recombination dominated transport in the as-deposited devices was reduced after annealing and partially replaced by bulk recombination. This was accompanied by a decrease in the saturation current and diode ideality factor. The influence of the heat treatment on the buffer/hetero-interface region as determined by capacitance measurements was minor. We conclude that a reduction in the interface states density and in the p + layer doping caused by the chemical modification of the hetero-interface region is the major source of the improvement. © 2012 Elsevier B.V. All rights reserved.
Author Heba Abdel Maksoud (FP / SD)
Heba Abdel Maksoud,,
- Semiconductors Division
, Małgorzata Igalson (FP / SD)
Małgorzata Igalson,,
- Semiconductors Division
, S. Spiering
S. Spiering,,
Journal seriesThin Solid Films, ISSN 0040-6090
Issue year2013
Keywords in PolishCIGS, warstwa buforowa, transport prądu, In2S3, ogniwo słoneczne, stany międzypowierzchniowe, spektroskopia admitancyjna
Keywords in EnglishCIGS; buffer; current transport; In2S3; solar cell; interface states; admittance spectroscopy
ASJC Classification2505 Materials Chemistry; 2506 Metals and Alloys; 2508 Surfaces, Coatings and Films; 3110 Surfaces and Interfaces; 2504 Electronic, Optical and Magnetic Materials
Languageen angielski
Score (nominal)30
Score sourcejournalList
ScoreMinisterial score = 30.0, 01-02-2020, ArticleFromJournal
Ministerial score (2013-2016) = 30.0, 01-02-2020, ArticleFromJournal
Publication indicators Scopus Citations = 10; WoS Citations = 9; Scopus SNIP (Source Normalised Impact per Paper): 2013 = 1.195; WoS Impact Factor: 2013 = 1.867 (2) - 2013=2.038 (5)
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