Influence of post-deposition heat treatment on electrical transport properties of In2S3-buffered Cu(In,Ga)Se2 cells
Heba Abdel Maksoud , Małgorzata Igalson , S. Spiering
AbstractThe electrical characteristics of Cu(In,Ga)Se2-based solar cells with In2S3 buffer were investigated. The effects of post-deposition annealing in helium or in air on current-voltage characteristics, net acceptor density profiles and admittance spectra were studied. Analysis of the current-voltage characteristics showed that interface recombination dominated transport in the as-deposited devices was reduced after annealing and partially replaced by bulk recombination. This was accompanied by a decrease in the saturation current and diode ideality factor. The influence of the heat treatment on the buffer/hetero-interface region as determined by capacitance measurements was minor. We conclude that a reduction in the interface states density and in the p + layer doping caused by the chemical modification of the hetero-interface region is the major source of the improvement. © 2012 Elsevier B.V. All rights reserved.
|Journal series||Thin Solid Films, ISSN 0040-6090|
|Keywords in Polish||CIGS, warstwa buforowa, transport prądu, In2S3, ogniwo słoneczne, stany międzypowierzchniowe, spektroskopia admitancyjna|
|Keywords in English||CIGS; buffer; current transport; In2S3; solar cell; interface states; admittance spectroscopy|
|ASJC Classification||; ; ; ;|
|Score|| = 30.0, 01-02-2020, ArticleFromJournal|
= 30.0, 01-02-2020, ArticleFromJournal
|Publication indicators||= 10; = 9; : 2013 = 1.195; : 2013 = 1.867 (2) - 2013=2.038 (5)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.