Electron energy quantization effects in the very thin film GAA SOI transistor

Bogdan Majkusiak , Tomasz Janik

Abstract

Analysis of the energy quantization effects on the semiconductor region of the Gate-All-Around SOI transistor, based on the self-consistent solution to the Schrödinger and Poisson equations is presented in dependence on the gate voltage and semiconductor film thickness. For thicker semiconductor films the energy quantization manifests mainly at high surface potentials due to the confinement of electron wave functions in the potential wells at the surfaces. When the semiconductor film is very thin the quantization due to the confinement of electrons in the semiconductor film dominates and the maximum of electron concentration is located in the middle of it, supporting the concept of volume inversion. Upon increasing the gate voltage the concentration peak splits into two ones.
Author Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
, Tomasz Janik (FEIT / MO)
Tomasz Janik,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesMicroelectronic Engineering, ISSN 0167-9317
Issue year1997
Vol36
No1–4
Pages379-382
ASJC Classification2208 Electrical and Electronic Engineering; 2508 Surfaces, Coatings and Films; 3104 Condensed Matter Physics; 3107 Atomic and Molecular Physics, and Optics; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1016/S0167-9317(97)00084-1
URL http://www.sciencedirect.com/science/article/pii/S0167931797000841
Score (nominal)25
Score sourcejournalList
Publication indicators Scopus Citations = 2; WoS Citations = 2; GS Citations = 4.0; Scopus SNIP (Source Normalised Impact per Paper): 2014 = 0.897; WoS Impact Factor: 2006 = 1.398 (2) - 2007=1.453 (5)
Citation count*4 (2014-05-03)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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