A review of SOI transistor models
Małgorzata Jurczak , Andrzej Jakubowski , Lidia
AbstractSeveral SOI MOSFET models based on 1-D solution of Poisson's equation are compared in terms of their accuracy. A brief discussion of the simplifying assumptions leads to a conclusion that the methods used for surface potential evaluation strongly influence the accuracy of a model. An analytical approximation for the front surface potential is presented and then introduced into the fully analytical Lim-Fossum model . The accuracy of the modified model is better than that of the original Lim-Fossum model .
|Journal series||Microelectronics Journal, ISSN 0026-2692|
|Publication indicators||: 2006 = 0.651 (2) - 2007=0.682 (5)|
|Citation count*||5 (2015-03-26)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.