A review of SOI transistor models

Małgorzata Jurczak , Andrzej Jakubowski , Lidia

Abstract

Several SOI MOSFET models based on 1-D solution of Poisson's equation are compared in terms of their accuracy. A brief discussion of the simplifying assumptions leads to a conclusion that the methods used for surface potential evaluation strongly influence the accuracy of a model. An analytical approximation for the front surface potential is presented and then introduced into the fully analytical Lim-Fossum model [1]. The accuracy of the modified model is better than that of the original Lim-Fossum model [1].
Author Małgorzata Jurczak (FEIT / MO)
Małgorzata Jurczak,,
- The Institute of Microelectronics and Optoelectronics
, Andrzej Jakubowski (FEIT / MO)
Andrzej Jakubowski,,
- The Institute of Microelectronics and Optoelectronics
, Lidia
Lidia ,,
-
Journal seriesMicroelectronics Journal, ISSN 0026-2692
Issue year1997
Vol28
No2
Pages173-182
DOIDOI:10.1016/S0026-2692(96)00078-X
URL http://www.sciencedirect.com/science/article/pii/S002626929600078X
Score (nominal)20
Publication indicators WoS Impact Factor: 2006 = 0.651 (2) - 2007=0.682 (5)
Citation count*5 (2015-03-26)
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