Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model

Tomasz Janik , Bogdan Majkusiak

Abstract

The effects of carrier energy quantization in the semiconductor surface region on performance of the metal-oxide-semiconductor (MOS) transistor are theoretically considered by comparison of results of a self-consistent solution to the Schrodinger and Poisson equations and the results of the classical description. The gate voltage dependencies of the surface potential and inversion layer charge density are compared. Using the local mobility model the relations between the electron effective mobility and the electric effective field obtained from the both descriptions are for the first time compared. The accuracy of the commonly used triangular well approximation is examined. This approximation is used for calculation of the transistor current-voltage (I-V) characteristics. Simulations are performed for MOS transistors with ultrathin oxides and highly doped substrates, in accordance with the state of the art of today's VLSI/ULSI technology
Author Tomasz Janik IMiO
Tomasz Janik,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak IMiO
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesIEEE Transactions on Electron Devices, ISSN 0018-9383
Issue year1998
Vol45
No6
Pages1263-1271
Keywords in EnglishAcoustic scattering, carrier energy quantization, carrier mobility, current-voltage characteristics, electric effective field, electron effective mobility, electron mobility, gate voltage dependencies, highly doped substrates, inversion layer charge density, inversion layers, I-V characteristics, local mobility model, MOSFET, MOSFETs, MOS transistor, Optical scattering, Particle scattering, Poisson equation, Poisson equations, quantization, Schrodinger equation, self-consistent solution, semiconductor device models, semiconductor surface region, substrates, surface potential, triangular well approximation, ultrathin oxides, Very large scale integration, Voltage
DOIDOI:10.1109/16.678531
Score (nominal)35
Publication indicators WoS Impact Factor: 2006 = 2.052 (2) - 2007=2.227 (5)
Citation count*80 (2015-03-29)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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