Heterojunctions of amorphous wide band gap nitrides and silicon
Aleksander Werbowy , J Szmidt , Aleksandra Sokołowska , A. Olszyna
AbstractIn situ doped nanocrystalline BN, AlN and GaN films were deposited by means of impulse plasma assisted CVD method on silicon substrates. As a result c-BN(n-type)/Si(p-type) as well as AlN(p-type)/Si(n-type) and GaN(p-type)/Si(n-type) heterojunction structures were formed. On the basis of C–V measurements barrier heights of investigated Si/nitride systems were estimated together with work function values ϕ of boron and aluminum nitrides. Also a hypothetical energy band diagram for obtained AlN/Si heterostructures was proposed.
|Journal series||Diamond and Related Materials, ISSN 0925-9635|
|Keywords in English||band structure, Doping n-type, Doping p-type, nitride|
|Publication indicators||: 2006 = 1.935 (2) - 2007=1.895 (5)|
|Citation count*||9 (2015-07-21)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.