Heterojunctions of amorphous wide band gap nitrides and silicon

Aleksander Werbowy , J Szmidt , Aleksandra Sokołowska , A. Olszyna

Abstract

In situ doped nanocrystalline BN, AlN and GaN films were deposited by means of impulse plasma assisted CVD method on silicon substrates. As a result c-BN(n-type)/Si(p-type) as well as AlN(p-type)/Si(n-type) and GaN(p-type)/Si(n-type) heterojunction structures were formed. On the basis of C–V measurements barrier heights of investigated Si/nitride systems were estimated together with work function values ϕ of boron and aluminum nitrides. Also a hypothetical energy band diagram for obtained AlN/Si heterostructures was proposed.
Author Aleksander Werbowy IMiO
Aleksander Werbowy,,
- The Institute of Microelectronics and Optoelectronics
, J Szmidt
J Szmidt,,
-
, Aleksandra Sokołowska
Aleksandra Sokołowska,,
-
, A. Olszyna
A. Olszyna,,
-
Journal seriesDiamond and Related Materials, ISSN 0925-9635
Issue year1998
Vol7
No2–5
Pages397-401
Keywords in Englishband structure, Doping n-type, Doping p-type, nitride
DOIDOI:10.1016/S0925-9635(97)00227-6
URL http://www.sciencedirect.com/science/article/pii/S0925963597002276
Score (nominal)30
Publication indicators WoS Impact Factor: 2006 = 1.935 (2) - 2007=1.895 (5)
Citation count*9 (2015-07-21)
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