Experimental and theoretical study of the current-voltage characteristics of the MISIM tunnel transistor
AbstractCurrent-voltage (I-V) characteristics of the metal-insulator-semiconductor-insulator-metal (MISIM) tunnel transistor in the common base and common emitter configurations are studied experimentally and theoretically. The Al-SiO2-Si(n)-SiO2 -Al transistors with oxide layers of about 2.5 nm thickness have been manufactured. The devices exhibit current gain above 30 in the common base configuration and switching in the common emitter configuration. A theoretical static model of the MISIM tunnel transistor has been developed and applied to analyze the measured I-V characteristics for both operation configurations. Excellent fit of the model to the experimental data has been achieved. Influence of oxide thickness and interface trap density on the switching voltage has been investigated theoretically
|Journal series||IEEE Transactions on Electron Devices, ISSN 0018-9383|
|Keywords in English||2.5 nm, Al/SiO2/n-Si/SiO2/Al transistors, Al-SiO2-Si-SiO2-Al, aluminium, bipolar transistors, common base configuration, common emitter configuration, current gain, current-voltage characteristics, electrodes, electrons, elemental semiconductors, interface trap density, I-V characteristics, Metal-insulator structures, MIS devices, MISIM tunnel transistor, MOS devices, MOSFETs, MOS technology, oxide layers, oxide thickness, semiconductor device models, semiconductor diodes, silicon, silicon compounds, substrates, switches, switching voltage, theoretical static model, Tunneling, tunnelling, tunnel transistors|
|Publication indicators||: 2006 = 2.052 (2) - 2007=2.227 (5)|
|Citation count*||14 (2015-03-29)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.