Semiconductor thickness effects in the double-gate SOI MOSFET
Bogdan Majkusiak , Tomasz Janik , Jakub Walczak
AbstractInfluence of the semiconductor film thickness in the double-gate silicon on-insulator (SOI) MOSFET on the electron concentration distribution, electron charge density, threshold voltage, electron effective mobility, and drain current is theoretically analyzed. The consideration of the semiconductor region is based on two descriptions: the ldquo;classical rdquo; model based on a solution to the Poisson equation and the ldquo;quantum rdquo; model based on a self-consistent solution to the Schrodinger and Poisson equation system. The electron effective mobility and the drain current are calculated with the use of the local mobility model
|Journal series||IEEE Transactions on Electron Devices, ISSN 0018-9383|
|Keywords in English||classical model, double-gate SOI MOSFET, drain current, electrodes, electron charge density, electron concentration distribution, electron density, electron effective mobility, electron mobility, Helium, local mobility model, MOSFET, MOSFET circuits, Poisson equation, Poisson equations, quantization, quantum model, Schrodinger equation, self-consistent solution, Semiconductor device modeling, semiconductor device models, Semiconductor films, semiconductor film thickness, semiconductor thickness effects, semiconductor thin films, Si, silicon-on-insulator, Silicon on insulator technology, threshold voltage|
|Publication indicators||: 2006 = 2.052 (2) - 2007=2.227 (5)|
|Citation count*||108 (2015-03-29)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.