The effects of high doping on the I-V characteristics of a thin-film SOI MOSFET

M Jurczak , Andrzej Jakubowski , Lidia Łukasiak

Abstract

Modifications of the Ortiz-Conde et al., model which take into account either apparent or physical bandgap narrowing have been presented. The influence of high doping effects is investigated by means of a comparison of the modified models with their original, version for various device parameters. It is shown that the inclusion of bandgap narrowing is essential for accurate simulation of I-V characteristics of a SOI MOSFET in the subthreshold and near-threshold regions. A new analytical model with bandgap narrowing has been derived for the subthreshold region
Author M Jurczak
M Jurczak,,
-
, Andrzej Jakubowski IMiO
Andrzej Jakubowski,,
- The Institute of Microelectronics and Optoelectronics
, Lidia Łukasiak IMiO
Lidia Łukasiak,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesIEEE Transactions on Electron Devices, ISSN 0018-9383
Issue year1998
Vol45
No9
Pages1985-1992
Keywords in Englishbandgap narrowing, capacitance, device parameters, Doping, electrons, energy gap, I-V characteristics, MOSFET, MOSFET circuits, near-threshold region, Ortiz-Conde model, photonic band gap, semiconductor device models, semiconductor doping, Semiconductor films, Semiconductor process modeling, silicon, silicon-on-insulator, subthreshold region, thin-film SOI MOSFET, transistors, Voltage
DOIDOI:10.1109/16.711365
Score (nominal)35
Publication indicators WoS Impact Factor [Impact Factor WoS]: 2006 = 2.052 (2) - 2007=2.227 (5)
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