The effects of high doping on the I-V characteristics of a thin-film SOI MOSFET
M Jurczak , Andrzej Jakubowski , Lidia Łukasiak
AbstractModifications of the Ortiz-Conde et al., model which take into account either apparent or physical bandgap narrowing have been presented. The influence of high doping effects is investigated by means of a comparison of the modified models with their original, version for various device parameters. It is shown that the inclusion of bandgap narrowing is essential for accurate simulation of I-V characteristics of a SOI MOSFET in the subthreshold and near-threshold regions. A new analytical model with bandgap narrowing has been derived for the subthreshold region
|Journal series||IEEE Transactions on Electron Devices, ISSN 0018-9383|
|Keywords in English||bandgap narrowing, capacitance, device parameters, Doping, electrons, energy gap, I-V characteristics, MOSFET, MOSFET circuits, near-threshold region, Ortiz-Conde model, photonic band gap, semiconductor device models, semiconductor doping, Semiconductor films, Semiconductor process modeling, silicon, silicon-on-insulator, subthreshold region, thin-film SOI MOSFET, transistors, Voltage|
|Publication indicators||: 2006 = 2.052 (2) - 2007=2.227 (5)|
|Citation count*||0 (2015-03-26)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.