Modeling of SOI-MOS capacitors C-V behavior: partially- and fully-depleted cases
F.A. Ikraiam , R.B. Beck , Andrzej Jakubowski
AbstractA model is presented for the C-V characteristics of partially-depleted (PD) and fully-depleted (FD) SOI-MOS capacitors. The proposed model is flexible, allowing introduction of all types of nonidealities typical to MOS type structures. New formulae for the low- and high-frequency capacitances of these structures are derived. Due to the various charges stored in these structures, unusual and more complex C-V curves are obtained. C-V curves where interface-state densities have been individually introduced (one at a time) at all three SiO2-Si interfaces of the SOI-MOS-C are also demonstrated. The model has been validated by fitting the predicted HF C-V curves for SOI-MOS-C and its inherent structure, the SIS capacitor, to the experimental data. The extracted electrophysical parameters of the studied structures, for both PD and FD cases, are very close, if not the same as the values determined during their fabrication
|Journal series||IEEE Transactions on Electron Devices, ISSN 0018-9383|
|Keywords in English||capacitance, capacitance-voltage characteristics, computer aided software engineering, curve fitting, C-V behavior modeling, data mining, extracted electrophysical parameters, Fabrication, fully-depleted case, Hafnium, HF C-V curves, high-frequency capacitance, interface-state densities, interface states, low-frequency capacitance, MOS capacitors, partially-depleted case, Predictive models, semiconductor device models, Semiconductor films, semiconductor-insulator boundaries, silicon-on-insulator, SiO2-Si, SIS capacitor, SOI-MOS capacitors|
|Publication indicators||: 2006 = 2.052 (2) - 2007=2.227 (5)|
|Citation count*||21 (2015-03-26)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.