Modeling of SOI-MOS capacitors C-V behavior: partially- and fully-depleted cases

F.A. Ikraiam , R.B. Beck , Andrzej Jakubowski


A model is presented for the C-V characteristics of partially-depleted (PD) and fully-depleted (FD) SOI-MOS capacitors. The proposed model is flexible, allowing introduction of all types of nonidealities typical to MOS type structures. New formulae for the low- and high-frequency capacitances of these structures are derived. Due to the various charges stored in these structures, unusual and more complex C-V curves are obtained. C-V curves where interface-state densities have been individually introduced (one at a time) at all three SiO2-Si interfaces of the SOI-MOS-C are also demonstrated. The model has been validated by fitting the predicted HF C-V curves for SOI-MOS-C and its inherent structure, the SIS capacitor, to the experimental data. The extracted electrophysical parameters of the studied structures, for both PD and FD cases, are very close, if not the same as the values determined during their fabrication
Author F.A. Ikraiam
F.A. Ikraiam,,
, R.B. Beck
R.B. Beck,,
, Andrzej Jakubowski IMiO
Andrzej Jakubowski,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesIEEE Transactions on Electron Devices, ISSN 0018-9383
Issue year1998
Keywords in Englishcapacitance, capacitance-voltage characteristics, computer aided software engineering, curve fitting, C-V behavior modeling, data mining, extracted electrophysical parameters, Fabrication, fully-depleted case, Hafnium, HF C-V curves, high-frequency capacitance, interface-state densities, interface states, low-frequency capacitance, MOS capacitors, partially-depleted case, Predictive models, semiconductor device models, Semiconductor films, semiconductor-insulator boundaries, silicon-on-insulator, SiO2-Si, SIS capacitor, SOI-MOS capacitors
Score (nominal)35
Publication indicators WoS Impact Factor: 2006 = 2.052 (2) - 2007=2.227 (5)
Citation count*21 (2015-03-26)
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