Relaxation of thermally induced defects in LPCVD amorphous silicon

P Agarwal , Marek Kostana , S.C Agarwal , S.M Pietruszko

Abstract

Thermally induced metastability has been studied on P doped LPCVD a-Si (low pressure chemical vapour deposited amorphous silicon) films as a function of the concentration of hydrogen in these films. The hydrogen concentration has been varied over two orders of magnitude, from 0.06 at.\% in as-deposited films to 15 at.\% in heavily implanted films. We find that thermal metastability effects are present even at the lowest concentrations of hydrogen. These become larger as hydrogen concentration increases. Our studies indicate that hydrogen plays an important role in thermal equilibration of a-Si:H and supports the hydrogen glass model.
Author P Agarwal
P Agarwal,,
-
, Marek Kostana IMiO
Marek Kostana,,
- The Institute of Microelectronics and Optoelectronics
, S.C Agarwal
S.C Agarwal,,
-
, S.M Pietruszko
S.M Pietruszko,,
-
Journal seriesJournal of Non-Crystalline Solids, ISSN 0022-3093
Issue year1998
Vol227–230, Part 1
No0
Pages328-331
Keywords in EnglishHydrogen content, LPCVD amorphous silicon, Metastability, Relaxation of defects
DOIDOI:10.1016/S0022-3093(98)00174-4
URL http://www.sciencedirect.com/science/article/pii/S0022309398001744
Score (nominal)35
Publication indicators WoS Impact Factor: 2006 = 1.362 (2) - 2007=1.494 (5)
Citation count*3 (2015-09-21)
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