Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of ncMOS structures

Dominik Tanous , Andrzej Igor Mazurak , Bogdan Majkusiak

Abstract

We present the study of impact of the nanocrystal position and oxide layers thicknesses of the metal-insulatorsemiconductor structure with nanocrystals embedded in the insulator layer on the time-dependent current-voltage and capacitance-voltage characteristics. The theoretical considerations are based on the developed numerical model of a double-barrier MOS structure. The dominant current path in the structure is analysed in respect to the nanocrystals charging/discharging processes.
Author Dominik Tanous (FEIT / MO)
Dominik Tanous,,
- The Institute of Microelectronics and Optoelectronics
, Andrzej Igor Mazurak (FEIT / MO)
Andrzej Igor Mazurak,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Pages1-8
Book Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351
Keywords in EnglishNanocrystals; Capacitance; Metals; Oxides
DOIDOI:10.1117/12.2261816
URL http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2595271
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 15.0, 30-04-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 30-04-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 1; Scopus Citations = 2; GS Citations = 2.0
Citation count*2 (2020-09-10)
Additional fields
Numer pracy101750H
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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