Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of ncMOS structures

Dominik Tanous , Andrzej Igor Mazurak , Bogdan Majkusiak

Abstract

We present the study of impact of the nanocrystal position and oxide layers thicknesses of the metal-insulatorsemiconductor structure with nanocrystals embedded in the insulator layer on the time-dependent current-voltage and capacitance-voltage characteristics. The theoretical considerations are based on the developed numerical model of a double-barrier MOS structure. The dominant current path in the structure is analysed in respect to the nanocrystals charging/discharging processes.
Author Dominik Tanous IMiO
Dominik Tanous,,
- The Institute of Microelectronics and Optoelectronics
, Andrzej Igor Mazurak IMiO
Andrzej Igor Mazurak,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak IMiO
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Pages1-8
Book Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351
Keywords in EnglishNanocrystals; Capacitance; Metals; Oxides
DOIDOI:10.1117/12.2261816
URL http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2595271
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Citation count*0
Additional fields
Numer pracy101750H
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