DLC passivation layers for high voltage silicon devices
Jan Szmidt , Zbigniew Lisik , Stanisław Mitura , W. Cieplak , Małgorzata Langer
AbstractDiamond-like carbon (DLC) layers, due to their properties, can act as very attractive material for microelectronics technology. In particular, they can be used to create passivation layers in semiconductor devices. In the contribution the investigations concerning such an application of the DLC layers as the passivation coating for high-voltage junctions in manufacturing of power semiconductor devices are presented. It has been found that at the ambient temperature the layers played the role of passivation layer very efficiently-the blocking capability of the test devices remained high and the dispersion of the breakdown voltages UBR was lower than before the coating process. At higher temperature, however, the unrequired tendency of banding of the I-V curves has been observed Since the properties of DLC layer strongly depend on the technology, the used technology process as well as technology apparatus are described
|Book||Electrotechnical Conference, 1998. MELECON 98., 9th Mediterranean, vol. 1, 1998|
|Keywords in English||ambient temperature, blocking capability, breakdown voltages, C, carbon, coatings, Diamond-like carbon, high voltage semiconductor devices, I-V curves, Microelectronics, microelectronics technology, organic materials, Passivation, passivation layers, power semiconductor devices, semiconductor device breakdown, semiconductor device manufacture, semiconductor devices, semiconductor materials, Si, Silicon devices, Voltage|
|Citation count*||1 (2015-03-03)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.