DLC passivation layers for high voltage silicon devices

Jan Szmidt , Zbigniew Lisik , Stanisław Mitura , W. Cieplak , Małgorzata Langer

Abstract

Diamond-like carbon (DLC) layers, due to their properties, can act as very attractive material for microelectronics technology. In particular, they can be used to create passivation layers in semiconductor devices. In the contribution the investigations concerning such an application of the DLC layers as the passivation coating for high-voltage junctions in manufacturing of power semiconductor devices are presented. It has been found that at the ambient temperature the layers played the role of passivation layer very efficiently-the blocking capability of the test devices remained high and the dispersion of the breakdown voltages UBR was lower than before the coating process. At higher temperature, however, the unrequired tendency of banding of the I-V curves has been observed Since the properties of DLC layer strongly depend on the technology, the used technology process as well as technology apparatus are described
Author Jan Szmidt IMiO
Jan Szmidt,,
- The Institute of Microelectronics and Optoelectronics
, Zbigniew Lisik
Zbigniew Lisik,,
-
, Stanisław Mitura
Stanisław Mitura,,
-
, W. Cieplak
W. Cieplak,,
-
, Małgorzata Langer
Małgorzata Langer,,
-
Pages345-348 vol.1
Book Electrotechnical Conference, 1998. MELECON 98., 9th Mediterranean, vol. 1, 1998
Keywords in Englishambient temperature, blocking capability, breakdown voltages, C, carbon, coatings, Diamond-like carbon, high voltage semiconductor devices, I-V curves, Microelectronics, microelectronics technology, organic materials, Passivation, passivation layers, power semiconductor devices, semiconductor device breakdown, semiconductor device manufacture, semiconductor devices, semiconductor materials, Si, Silicon devices, Voltage
DOIDOI:10.1109/MELCON.1998.692420
Languageen angielski
Score (nominal)1
Citation count*1 (2015-03-03)
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