Tunnel magnetoresistance in ferromagnetic double-barrier planar junctions: coherent tunneling regime
Michał Wilczyński , J Barnas
AbstractCoherent tunneling in a double-barrier system consisting of two external ferromagnetic electrodes and a nonmagnetic central one is studied theoretically within the free-electron approximation. It is shown that the junction resistance depends on the relative orientation of magnetic moments of the ferromagnetic electrodes (so-called tunnel magnetoresistance). The magnetoresistance vs. thickness of the central electrode shows pronounced peaks related to the resonant tunneling through the whole system. Variation of the magnetoresistance with bias voltage is also studied. This variation is generally nonmonotonous.
|Journal series||Journal of Magnetism and Magnetic Materials, ISSN 0304-8853|
|Keywords in English||Coherent tunneling, Electron transmission, Magnetoresistance, Tunnel Junctions|
|Publication indicators||= 32; : 2000 = 0.947; : 2006 = 1.212 (2) - 2007=1.358 (5)|
|Citation count*||28 (2013-01-30)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.