Tunnel magnetoresistance in ferromagnetic double-barrier planar junctions: coherent tunneling regime

Michał Wilczyński , J Barnas

Abstract

Coherent tunneling in a double-barrier system consisting of two external ferromagnetic electrodes and a nonmagnetic central one is studied theoretically within the free-electron approximation. It is shown that the junction resistance depends on the relative orientation of magnetic moments of the ferromagnetic electrodes (so-called tunnel magnetoresistance). The magnetoresistance vs. thickness of the central electrode shows pronounced peaks related to the resonant tunneling through the whole system. Variation of the magnetoresistance with bias voltage is also studied. This variation is generally nonmonotonous.
Author Michał Wilczyński (FP / SRD)
Michał Wilczyński,,
- Structural Research Division
, J Barnas
J Barnas,,
-
Journal seriesJournal of Magnetism and Magnetic Materials, ISSN 0304-8853
Issue year2000
Vol221
No3
Pages373-381
Keywords in EnglishCoherent tunneling, Electron transmission, Magnetoresistance, Tunnel Junctions
ASJC Classification3104 Condensed Matter Physics; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1016/S0304-8853(00)00514-X
URL http://www.sciencedirect.com/science/article/pii/S030488530000514X
Score (nominal)25
Score sourcejournalList
Publication indicators WoS Citations = 32; Scopus SNIP (Source Normalised Impact per Paper): 2000 = 0.947; WoS Impact Factor: 2006 = 1.212 (2) - 2007=1.358 (5)
Citation count*28 (2013-01-30)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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