Thermally assisted tunnelling in Cu(In,Ga)Se2-based photovoltaic devices

Paweł Zabierowski , Małgorzata Igalson

Abstract

The effect of thermally assisted tunnelling has been found to explain the commonly observed non-linearities of admittance and RDLTS Arrhenius plots. In terms of this model the light induced increase of the emission rates has been ascribed to the lowering of the tunnelling barrier. We have proposed that the physical picture underlying these metastabilities is essentially the same as used for explanation of the cross-over effect. These statements are confirmed by numerical calculations.
Author Paweł Zabierowski (FP / SD)
Paweł Zabierowski,,
- Semiconductors Division
, Małgorzata Igalson (FP / SD)
Małgorzata Igalson,,
- Semiconductors Division
Journal seriesThin Solid Films, ISSN 0040-6090
Issue year2000
Vol361–362
No0
Pages268-272
Keywords in EnglishCu(In,Ga)Se2, Deep level transient spectroscopy, interface states, tunnelling
ASJC Classification2505 Materials Chemistry; 2506 Metals and Alloys; 2508 Surfaces, Coatings and Films; 3110 Surfaces and Interfaces; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1016/S0040-6090(99)00817-2
URL http://www.sciencedirect.com/science/article/pii/S0040609099008172
Languageen angielski
Score (nominal)30
Score sourcejournalList
Publication indicators Scopus Citations = 15; WoS Citations = 14; Scopus SNIP (Source Normalised Impact per Paper): 2000 = 0.928; WoS Impact Factor: 2006 = 1.666 (2) - 2007=1.868 (5)
Citation count*10 (2015-03-27)
Cite
Share Share

Get link to the record


* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
Back
Confirmation
Are you sure?