Thermally assisted tunnelling in Cu(In,Ga)Se2-based photovoltaic devices
Paweł Zabierowski , Małgorzata Igalson
AbstractThe effect of thermally assisted tunnelling has been found to explain the commonly observed non-linearities of admittance and RDLTS Arrhenius plots. In terms of this model the light induced increase of the emission rates has been ascribed to the lowering of the tunnelling barrier. We have proposed that the physical picture underlying these metastabilities is essentially the same as used for explanation of the cross-over effect. These statements are confirmed by numerical calculations.
|Journal series||Thin Solid Films, ISSN 0040-6090|
|Keywords in English||Cu(In,Ga)Se2, Deep level transient spectroscopy, interface states, tunnelling|
|ASJC Classification||; ; ; ;|
|Publication indicators||= 15; = 14; : 2000 = 0.928; : 2006 = 1.666 (2) - 2007=1.868 (5)|
|Citation count*||10 (2015-03-27)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.