Semiconductor thickness and back-gate voltage effects on the gate tunnel current in the MOS/SOI system with an ultrathin oxide
Bogdan Majkusiak , M.H. Badri
AbstractThe effects of the semiconductor layer thickness and the back-gate voltage on the current-voltage (I-V) characteristics of the MOS/SOI tunnel diode with an aluminum gate and n-type semiconductor layers are theoretically investigated. If the semiconductor thickness is reduced or the back-gate voltage is more negative, the total thermal generation current decreases and the gate-oxide thickness critical for transition from the quasiequilibrium strong inversion state to the nonequilibrium state increases. If the MOS/SOI tunnel diode is in the transition range between the nonequilibrium and quasiequilibrium states, a positive increase of the back-gate voltage VBG results in a strong increase of the majority carrier tunnel current. This back-gate effect may be exploited in more functional devices based on the MOS/SOI tunnel diode.
|Journal series||IEEE Transactions on Electron Devices, ISSN 0018-9383|
|Keywords in English||Al-SiO-Si, aluminium, aluminum, back-gate voltage, critical thickness, electrodes, elemental semiconductors, gate tunnel current, Helium, I-V characteristics, Leakage current, majority carrier tunnel current, MIS devices, MOS devices, MOSFETs, MOS/SOI system, nonequilibrium state, quasiequilibrium strong inversion state, semiconductor device models, semiconductor diodes, semiconductor layer thickness, silicon, silicon compounds, silicon-on-insulator, substrates, thermal generation current, tunnel diode, tunnel diodes, Tunneling, ultrathin oxide, Voltage|
|Publication indicators||= 5; = 5; = 4.0; : 2000 = 1.924; : 2006 = 2.052 (2) - 2007=2.227 (5)|
|Citation count*||4 (2015-03-29)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.