Semiconductor thickness and back-gate voltage effects on the gate tunnel current in the MOS/SOI system with an ultrathin oxide

Bogdan Majkusiak , M.H. Badri

Abstract

The effects of the semiconductor layer thickness and the back-gate voltage on the current-voltage (I-V) characteristics of the MOS/SOI tunnel diode with an aluminum gate and n-type semiconductor layers are theoretically investigated. If the semiconductor thickness is reduced or the back-gate voltage is more negative, the total thermal generation current decreases and the gate-oxide thickness critical for transition from the quasiequilibrium strong inversion state to the nonequilibrium state increases. If the MOS/SOI tunnel diode is in the transition range between the nonequilibrium and quasiequilibrium states, a positive increase of the back-gate voltage VBG results in a strong increase of the majority carrier tunnel current. This back-gate effect may be exploited in more functional devices based on the MOS/SOI tunnel diode.
Author Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
, M.H. Badri - [Warsaw University of Technology (PW)]
M.H. Badri,,
-
- Politechnika Warszawska
Journal seriesIEEE Transactions on Electron Devices, ISSN 0018-9383
Issue year2000
Vol47
No12
Pages2347-2351
Keywords in EnglishAl-SiO-Si, aluminium, aluminum, back-gate voltage, critical thickness, electrodes, elemental semiconductors, gate tunnel current, Helium, I-V characteristics, Leakage current, majority carrier tunnel current, MIS devices, MOS devices, MOSFETs, MOS/SOI system, nonequilibrium state, quasiequilibrium strong inversion state, semiconductor device models, semiconductor diodes, semiconductor layer thickness, silicon, silicon compounds, silicon-on-insulator, substrates, thermal generation current, tunnel diode, tunnel diodes, Tunneling, ultrathin oxide, Voltage
ASJC Classification2208 Electrical and Electronic Engineering; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1109/16.887019
Score (nominal)35
Score sourcejournalList
Publication indicators Scopus Citations = 5; WoS Citations = 5; GS Citations = 4.0; Scopus SNIP (Source Normalised Impact per Paper): 2000 = 1.924; WoS Impact Factor: 2006 = 2.052 (2) - 2007=2.227 (5)
Citation count*4 (2015-03-29)
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