Modelling of responsivity of INP-PIN photodiode for studying optical-microwave frequency conversion processes

Bogdan Galwas , Jarosław Dawidczyk , Aleksander Chyzh , Sergei A Malyshev

Abstract

The paper presents investigations of optical-microwave frequency conversion processes for InP-PIN photodiode. The planar InGaAsP/InGaAs/InP heterostructure PIN photodiode operating at 1.3 µm has been used in an optoelectronic mixer configuration. The nonlinear model of the PIN photodiode responsivity has been assumed. The mathematical analysis of frequency conversion process and results of simulation are presented. The obtained results of calculation and results of measurements are compared and discussed.
Author Bogdan Galwas (FEIT / MO)
Bogdan Galwas,,
- The Institute of Microelectronics and Optoelectronics
, Jarosław Dawidczyk (FEIT / MO)
Jarosław Dawidczyk,,
- The Institute of Microelectronics and Optoelectronics
, Aleksander Chyzh
Aleksander Chyzh,,
-
, Sergei A Malyshev
Sergei A Malyshev,,
-
Book , 2000
Keywords in EnglishING-INF/01 Elettronica
URL http://amsacta.unibo.it/264/
Score (nominal)3
Publication indicators GS Citations = 1.0
Citation count*1 (2015-05-06)
Cite
Share Share

Get link to the record


* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
Back
Confirmation
Are you sure?