Transient capacitance spectroscopy of defect levels in CIGS devices

Małgorzata Igalson , Paweł Zabierowski


The conventional DLTS, deep level transient spectroscopy, reverse-bias DLTS and Laplace transform analysis of capacitance transients have been employed for investigation of defect spectra in the bulk and at the interface of standard ZnO/CdS/Cu(In,Ga)Se2 devices. The results are reviewed with special attention devoted to the persistent changes induced by illumination or bias voltage. In the discussion a model of mobile copper ions and shallow-deep transition of compensating donors are compared. We show, that defect relaxation model can also account for the observed phenomena. One of its consequences is a dipole layer in the interface region, consisting of positively charged interface states and negatively charged thin layer of absorber with persistently removed compensation.
Author Małgorzata Igalson (FP / SD)
Małgorzata Igalson,,
- Semiconductors Division
, Paweł Zabierowski (FP / SD)
Paweł Zabierowski,,
- Semiconductors Division
Journal seriesThin Solid Films, ISSN 0040-6090
Issue year2000
Keywords in Englishcapacitance, Cu(In,Ga)Se2, deep levels, Interface, Photovoltaic devices
ASJC Classification2505 Materials Chemistry; 2506 Metals and Alloys; 2508 Surfaces, Coatings and Films; 3110 Surfaces and Interfaces; 2504 Electronic, Optical and Magnetic Materials
Languageen angielski
Score (nominal)30
Score sourcejournalList
Publication indicators Scopus Citations = 40; WoS Citations = 41; Scopus SNIP (Source Normalised Impact per Paper): 2000 = 0.928; WoS Impact Factor: 2006 = 1.666 (2) - 2007=1.868 (5)
Citation count*22 (2015-05-05)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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