Transient capacitance spectroscopy of defect levels in CIGS devices
Małgorzata Igalson , Paweł Zabierowski
AbstractThe conventional DLTS, deep level transient spectroscopy, reverse-bias DLTS and Laplace transform analysis of capacitance transients have been employed for investigation of defect spectra in the bulk and at the interface of standard ZnO/CdS/Cu(In,Ga)Se2 devices. The results are reviewed with special attention devoted to the persistent changes induced by illumination or bias voltage. In the discussion a model of mobile copper ions and shallow-deep transition of compensating donors are compared. We show, that defect relaxation model can also account for the observed phenomena. One of its consequences is a dipole layer in the interface region, consisting of positively charged interface states and negatively charged thin layer of absorber with persistently removed compensation.
|Journal series||Thin Solid Films, ISSN 0040-6090|
|Keywords in English||capacitance, Cu(In,Ga)Se2, deep levels, Interface, Photovoltaic devices|
|ASJC Classification||; ; ; ;|
|Publication indicators||= 40; = 41; : 2000 = 0.928; : 2006 = 1.666 (2) - 2007=1.868 (5)|
|Citation count*||22 (2015-05-05)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.