The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure

H. Teisseyre , T. J. Ochalski , Piotr Perlin , T. Suski , Mariusz Leszczyński , I. Grzegory , Michał Bockowski , B. Łucznik , M Bugajski , M. Palczewska , Wojciech Gębicki

Abstract

Abstract Oxygen contamination is the main source of free electrons in bulk GaN grown at high-pressure. We used erbium as a promising getter/compensation center to reduce the electron content in GaN. Both optical and electrical measurements indicate the reduction of electron concentration from the initial 6 × 1019cm−3 down to 1 × 1019cm−3. A photoluminescence study proves that erbium is incorporated into the GaN host lattice, and emits light at ∼ 1.5μm.
Author H. Teisseyre
H. Teisseyre,,
-
, T. J. Ochalski
T. J. Ochalski,,
-
, Piotr Perlin
Piotr Perlin,,
-
, T. Suski
T. Suski,,
-
, Mariusz Leszczyński
Mariusz Leszczyński,,
-
, I. Grzegory
I. Grzegory,,
-
, Michał Bockowski
Michał Bockowski,,
-
, B. Łucznik
B. Łucznik,,
-
, M Bugajski
M Bugajski,,
-
, M. Palczewska
M. Palczewska,,
-
et al.`
Journal seriesHigh Pressure Research, ISSN 0895-7959
Issue year2000
Vol18
No1-6
Pages35-39
DOIDOI:10.1080/08957950008200945
URL http://www.tandfonline.com/doi/abs/10.1080/08957950008200945
Languageen angielski
Score (nominal)25
Publication indicators WoS Impact Factor: 2006 = 1.228 (2) - 2007=0.593 (5)
Citation count*
Cite
Share Share

Get link to the record


* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
Back
Confirmation
Are you sure?