The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure

H. Teisseyre , T. J. Ochalski , Piotr Perlin , T. Suski , Mariusz Leszczyński , I. Grzegory , Michał Bockowski , B. Łucznik , M Bugajski , M. Palczewska , Wojciech Gębicki


Abstract Oxygen contamination is the main source of free electrons in bulk GaN grown at high-pressure. We used erbium as a promising getter/compensation center to reduce the electron content in GaN. Both optical and electrical measurements indicate the reduction of electron concentration from the initial 6 × 1019cm−3 down to 1 × 1019cm−3. A photoluminescence study proves that erbium is incorporated into the GaN host lattice, and emits light at ∼ 1.5μm.
Author H. Teisseyre
H. Teisseyre,,
, T. J. Ochalski
T. J. Ochalski,,
, Piotr Perlin
Piotr Perlin,,
, T. Suski
T. Suski,,
, Mariusz Leszczyński
Mariusz Leszczyński,,
, I. Grzegory
I. Grzegory,,
, Michał Bockowski
Michał Bockowski,,
, B. Łucznik
B. Łucznik,,
, M Bugajski
M Bugajski,,
, M. Palczewska
M. Palczewska,,
et al.`
Journal seriesHigh Pressure Research, ISSN 0895-7959
Issue year2000
Languageen angielski
Score (nominal)25
Publication indicators WoS Impact Factor: 2006 = 1.228 (2) - 2007=0.593 (5)
Citation count*
Share Share

Get link to the record

* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
Are you sure?