The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure
H. Teisseyre , T. J. Ochalski , Piotr Perlin , T. Suski , Mariusz Leszczyński , I. Grzegory , Michał Bockowski , B. Łucznik , M Bugajski , M. Palczewska , Wojciech Gębicki
AbstractAbstract Oxygen contamination is the main source of free electrons in bulk GaN grown at high-pressure. We used erbium as a promising getter/compensation center to reduce the electron content in GaN. Both optical and electrical measurements indicate the reduction of electron concentration from the initial 6 × 1019cm−3 down to 1 × 1019cm−3. A photoluminescence study proves that erbium is incorporated into the GaN host lattice, and emits light at ∼ 1.5μm.
|Journal series||High Pressure Research, ISSN 0895-7959|
|Publication indicators||: 2006 = 1.228 (2) - 2007=0.593 (5)|
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