Statistical many-dimensional simulation of VLSI technology based on response surface methodology

Maxim V. Kazitov , Wiesław Kuźmicz , V Nelayev , V Stempitsky

Abstract

With increasing IC packing density IC manufacturing processes are becoming more and more complex and tolerances of process parameters more critical for production yield and product reliability, and thus the economic viability of the IC manufacturing. At the same time IC structures can no longer be treated as 1D or even 2D. Therefore statistical multi-dimensional simulation of IC technology accounting for fluctuations of process parameters becomes more and more important. We present preliminary results of the statistical performance of the response surface methodology applied to numerical process and device simulation for the evaluation of the influence of random process fluctuations on the device performance.
Author Maxim V. Kazitov
Maxim V. Kazitov,,
-
, Wiesław Kuźmicz (FEIT / MO)
Wiesław Kuźmicz,,
- The Institute of Microelectronics and Optoelectronics
, V Nelayev
V Nelayev,,
-
, V Stempitsky
V Stempitsky,,
-
Journal series
Issue year2000
Pages179-183
DOIDOI:10.1117/12.375423
URL http://dx.doi.org/10.1117/12.375423
Score (nominal)0
Score sourcejournalList
Publication indicators WoS Citations = 1; GS Citations = 9.0
Citation count*10 (2020-09-07)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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