Defects in Cu(In, Ga) Se2 semiconductors and their role in the device performance of thin-film solar cells

M. Burgelman , F. Engelhardt , J. F. Guillemoles , R. Herberholz , Małgorzata Igalson , R. Klenk , M. Lampert , T. Meyer , V. Nadenau , A. Niemegeers , J. Parisi , U. Rau , H. W. Schock , M. Schmitt , O. Seifert , T. Walter , S. Zott


This contribution is a summary of an international, interdisciplinary workshop dedicated to defects in chalcopyrite semiconductors and their relation to the device characteristics of thin-film solar cells, held on 3–5 June 1996 in Oberstdorf, Germany. Results of different characterization methods were brought together to identify common observations. The comparison of results from electrical defect spectroscopy and luminescence investigations confirmed the presence of energetic distributions of defects throughout the bandgap of chalcopyrite thin films. Electrical defect spectroscopy detects a defect about 280 meV above the valence band edge of Cu(In, Ga)Se2 regardless of the preparation conditions of the sample. In a solar cell the density of this defect depends on the operation conditions. This observation might be related to the migration of copper in an electric field, which occurs even at room temperature. Other defects appear to be related to processing or impurities. Photoluminescence decay measurements yield time constants of several nanoseconds under low injection conditions. Modelling of the current–voltage characteristics of Cu(In, Ga)Se2-based thin-film cells suggests that compensating acceptor states in the CdS or at the heterointerface are responsible for the frequently observed cross-overs between the dark and illuminated curves.© 1997 John Wiley \& Sons, Ltd.
Author M. Burgelman
M. Burgelman,,
, F. Engelhardt
F. Engelhardt,,
, J. F. Guillemoles
J. F. Guillemoles,,
, R. Herberholz
R. Herberholz,,
, Małgorzata Igalson (FP / SD)
Małgorzata Igalson,,
- Semiconductors Division
, R. Klenk
R. Klenk,,
, M. Lampert
M. Lampert,,
, T. Meyer
T. Meyer,,
, V. Nadenau
V. Nadenau,,
, A. Niemegeers
A. Niemegeers,,
et al.`
Journal seriesProgress in Photovoltaics, ISSN 1062-7995
Issue year1997
ASJC Classification2208 Electrical and Electronic Engineering; 3104 Condensed Matter Physics; 2105 Renewable Energy, Sustainability and the Environment; 2504 Electronic, Optical and Magnetic Materials
Languageen angielski
Score (nominal)45
Score sourcejournalList
Publication indicators WoS Citations = 52; Scopus SNIP (Source Normalised Impact per Paper): 2014 = 3.874; WoS Impact Factor: 2006 = 2.009 (2) - 2007=2.108 (5)
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