RF plasma selective etching of boron nitride films

Aleksander Werbowy , Jan Szmidt , Aleksandra Sokołowska , Stanisław Mitura

Abstract

In the paper we have discussed the possibilities of dry RF (13.56 MHz) plasma etching of nanocrystalline cubic boron nitride (BN) films. 110 nm thick BN layers were deposited on Si substrates by means of the reactive pulse plasma CVD method and then locally covered with Al metallization playing the role of a mask. Subsequently, samples were exposed to the influence of Ar, CH4 and Ar+CH4 RF plasma environments. In general, the material was more efficiently removed at higher negative self-bias potentials between electrodes. The best results were obtained when BN layers were etched in plasma induced in an Ar+CH4 mixture, i.e. in the course of a physico-chemical process.
Author Aleksander Werbowy (FEIT / MO)
Aleksander Werbowy,,
- The Institute of Microelectronics and Optoelectronics
, Jan Szmidt (FEIT / MO)
Jan Szmidt,,
- The Institute of Microelectronics and Optoelectronics
, Aleksandra Sokołowska - [Warsaw University of Technology (PW)]
Aleksandra Sokołowska,,
-
- Politechnika Warszawska
, Stanisław Mitura - [Lodz University of Technology]
Stanisław Mitura,,
-
-
Journal seriesDiamond and Related Materials, ISSN 0925-9635
Issue year2000
Vol9
No3–6
Pages609-613
Keywords in EnglishBoron nitride, Plasma etching, reactive pulse plasma
ASJC Classification2208 Electrical and Electronic Engineering; 2505 Materials Chemistry; 3100 General Physics and Astronomy; 2210 Mechanical Engineering; 1600 General Chemistry; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1016/S0925-9635(99)00207-1
URL http://www.sciencedirect.com/science/article/pii/S0925963599002071
Score (nominal)30
Score sourcejournalList
Publication indicators Scopus Citations = 7; WoS Citations = 4; GS Citations = 8.0; Scopus SNIP (Source Normalised Impact per Paper): 2000 = 0.952; WoS Impact Factor: 2006 = 1.935 (2) - 2007=1.895 (5)
Citation count*8 (2020-02-06)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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