Temperature dependence of Ti3+ doped sapphire whispering gallery mode resonator

J.G. Hartnett , M.E. Tobar , A.G. Mann , Jerzy Krupka , E.N. Ivanov

Abstract

A new method of compensating the frequency-temperature dependence of high-Q sapphire dielectric resonators near liquid nitrogen temperature is presented. This is achieved by doping monocrystalline sapphire with Ti3+ ions. This technique offers significant advantages over other methods
Author J.G. Hartnett
J.G. Hartnett,,
-
, M.E. Tobar
M.E. Tobar,,
-
, A.G. Mann
A.G. Mann,,
-
, Jerzy Krupka IMiO
Jerzy Krupka,,
- The Institute of Microelectronics and Optoelectronics
, E.N. Ivanov
E.N. Ivanov,,
-
Journal seriesElectronics Letters, ISSN 0013-5194
Issue year1998
Vol34
No2
Pages195-196
Keywords in EnglishAl2O3:Ti, compensation, dielectric resonators, frequency-temperature dependence, high-Q sapphire dielectric resonators, liquid nitrogen temperature, Q-factor, sapphire, Titanium, whispering gallery mode resonator
DOIDOI:10.1049/el:19980177
Score (nominal)25
Publication indicators WoS Impact Factor: 2006 = 1.063 (2) - 2007=0.888 (5)
Citation count*22 (2015-08-04)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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