Small-signal admittance model as a characterization tool of the MOS tunnel diode
Jakub Maciej Jasiński , Bogdan Majkusiak
AbstractThe tunnel leakage through the insulator layer of metal \#x2013;insulator \#x2013;semiconductor tunnel diodes and its small-signal admittance is investigated by means of a theoretical model of the metal \#x2013;oxide \#x2013;semiconductor tunnel diode based on a steady-state algorithm and the minority carrier relaxation time. The conclusions are reviewed using an experimental Al-SiO2-Si structure with an ultrathin oxide layer.
|Journal series||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, ISSN 1071-1023|
|Keywords in English||aluminium, carrier relaxation time, MIS structures, silicon compounds, tunnel diodes|
|Score|| = 25.0, 23-12-2019, ArticleFromJournal|
= 25.0, 23-12-2019, ArticleFromJournal
|Publication indicators||= 8; = 8; = 10.0; : 2013 = 1.358 (2) - 2013=1.233 (5)|
|Citation count*||10 (2020-09-02)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.