Defect signatures in copper gallium diselenide
Adam Krysztopa , Małgorzata Igalson , L. Gutay , J. Larsen , Y. Aida
AbstractResults of investigation on defect levels by photocurrent and capacitance spectroscopy methods in wide-gap photovoltaic semiconductor CuGaSe2 (CGSe) are presented. Agreement of defect levels signatures obtained by using various spectroscopic methods and regardless on material morphology is shown. The influence of measurement conditions and material properties on defect levels parameters is reported. Presented are experimental evidences that some of the observed level by various methods of defect spectroscopy, gives defect parameters correlated according to the Meyer - Neldel Rule (MNR). The signatures of defect levels in the epitaxial and polycrystalline CGSe are presented and, whenever possible, the characteristic parameters describing MNR are given.
|Publication size in sheets||0.5|
|Book||Nelson Brent (eds.): 37th Photovoltaic Specialists Conference, 2011|
|Keywords in English||capacitance spectroscopy method, copper compounds, copper gallium diselenide, CuGaSe2, defect level parameters, defect level signatures, defect spectroscopy, defect states, epitaxial CGSe, epitaxial growth, gallium compounds, material morphology, Meyer Neldel Rule, photoconductivity, photocurrent spectroscopy method, polycrystalline CGSe, ternary semiconductors, vapour phase epitaxial growth, wide band gap semiconductors, wide-gap photovoltaic semiconductor|
|Citation count*||3 (2015-05-06)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.