Defect signatures in copper gallium diselenide

Adam Krysztopa , Małgorzata Igalson , L. Gutay , J. Larsen , Y. Aida

Abstract

Results of investigation on defect levels by photocurrent and capacitance spectroscopy methods in wide-gap photovoltaic semiconductor CuGaSe2 (CGSe) are presented. Agreement of defect levels signatures obtained by using various spectroscopic methods and regardless on material morphology is shown. The influence of measurement conditions and material properties on defect levels parameters is reported. Presented are experimental evidences that some of the observed level by various methods of defect spectroscopy, gives defect parameters correlated according to the Meyer - Neldel Rule (MNR). The signatures of defect levels in the epitaxial and polycrystalline CGSe are presented and, whenever possible, the characteristic parameters describing MNR are given.
Author Adam Krysztopa ZP
Adam Krysztopa,,
- Semiconductors Division
, Małgorzata Igalson ZP
Małgorzata Igalson,,
- Semiconductors Division
, L. Gutay
L. Gutay,,
-
, J. Larsen
J. Larsen,,
-
, Y. Aida
Y. Aida,,
-
Pages000144-000148
Publication size in sheets0.5
Book Nelson Brent (eds.): 37th Photovoltaic Specialists Conference, 2011
Keywords in Englishcapacitance spectroscopy method, copper compounds, copper gallium diselenide, CuGaSe2, defect level parameters, defect level signatures, defect spectroscopy, defect states, epitaxial CGSe, epitaxial growth, gallium compounds, material morphology, Meyer Neldel Rule, photoconductivity, photocurrent spectroscopy method, polycrystalline CGSe, ternary semiconductors, vapour phase epitaxial growth, wide band gap semiconductors, wide-gap photovoltaic semiconductor
DOIDOI:10.1109/PVSC.2011.6185864
Languageen angielski
Score (nominal)10
Citation count*3 (2015-05-06)
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