Photoluminescence as a tool for investigations of the junction region in Cu(In,Ga)Se2-based solar cells

Marek Pawłowski , Paweł Zabierowski , Rajmund Bacewicz , H. Marko , N. Barreau

Abstract

We use different modes of photoluminescence (PL) technique to investigate recombination processes within the junction region of Cu(In,Ga)Se2-based solar cells. Components of the PL spectra associated with recombination within the junction region and in the bulk are distinguished. We provide arguments for the interpretation of the double diode effect in the p+ layer model basing on a close correlation between fill factor, PL intensity, and changes of space charge distribution induced by blue and red illumination.
Author Marek Pawłowski ZP
Marek Pawłowski,,
- Semiconductors Division
, Paweł Zabierowski ZP
Paweł Zabierowski,,
- Semiconductors Division
, Rajmund Bacewicz ZP
Rajmund Bacewicz,,
- Semiconductors Division
, H. Marko
H. Marko,,
-
, N. Barreau
N. Barreau,,
-
Journal seriesThin Solid Films, ISSN 0040-6090
Issue year2011
Vol519
No21
Pages7328-7331
Keywords in EnglishCIGSe, Double diode, Fill factor, photoluminescence, p+ layer
DOIDOI:10.1016/j.tsf.2010.12.237
URL http://www.sciencedirect.com/science/article/pii/S0040609011001015
Languageen angielski
Score (nominal)30
Publication indicators WoS Impact Factor: 2011 = 1.89 (2) - 2011=2.014 (5)
Citation count*8 (2016-01-24)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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