Temperature dependent vector large-signal measurements

Paweł Barmuta , Krzysztof Marek Czuba , G. Avolio , Dominique M. M.-P. Schreurs , A. Raffo , G. Vannini , G. Crupi


In this work the low-frequency dispersion affecting active devices is experimentally characterized by performing on-wafer vector large-signal measurements at different substrate temperatures. As a result, the influence of the thermal effects and traps can be clearly highlighted under different operating frequencies. Particularly, active load pull measurements are performed both at low- and high-frequency in order to evaluate the device performance under realistic operating conditions. As a case study an AlGaN/GaN HEMT on SiC is considered and a clear dependence of the dynamic characteristics on both the operating frequency and temperature is observed.
Author Paweł Barmuta ISE
Paweł Barmuta,,
- The Institute of Electronic Systems
, Krzysztof Marek Czuba ISE
Krzysztof Marek Czuba,,
- The Institute of Electronic Systems
, G. Avolio
G. Avolio,,
, Dominique M. M.-P. Schreurs
Dominique M. M.-P. Schreurs,,
, A. Raffo
A. Raffo,,
, G. Vannini
G. Vannini,,
, G. Crupi
G. Crupi,,
Publication size in sheets0.5
Book Proceedings of the 2011 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC 2011), 2011, Curran Associates, , ISBN 978-1-4577-0649-3, [IEEE Catalog Number: CFP1194A-ART]
Keywords in Englishactive load pull measurements, AlGaN-GaN, aluminium compounds, gallium compounds, high electron mobility transistors, III-V semiconductors, low-frequency dispersion, network analysers, on-wafer vector large-signal measurements, SiC, silicon compounds, temperature dependent vector large-signal measurements, thermal effects, wide band gap semiconductors
URL http://ieeexplore.ieee.org/document/5773312/
Languageen angielski
Score (nominal)10
Citation count*1 (2018-02-16)
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