Temperature dependent vector large-signal measurements
Paweł Barmuta , Krzysztof Marek Czuba , G. Avolio , Dominique M. M.-P. Schreurs , A. Raffo , G. Vannini , G. Crupi
AbstractIn this work the low-frequency dispersion affecting active devices is experimentally characterized by performing on-wafer vector large-signal measurements at different substrate temperatures. As a result, the influence of the thermal effects and traps can be clearly highlighted under different operating frequencies. Particularly, active load pull measurements are performed both at low- and high-frequency in order to evaluate the device performance under realistic operating conditions. As a case study an AlGaN/GaN HEMT on SiC is considered and a clear dependence of the dynamic characteristics on both the operating frequency and temperature is observed.
|Publication size in sheets||0.5|
|Book||Proceedings of the 2011 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC 2011), 2011, Curran Associates, , ISBN 978-1-4577-0649-3, [IEEE Catalog Number: CFP1194A-ART]|
|Keywords in English||active load pull measurements, AlGaN-GaN, aluminium compounds, gallium compounds, high electron mobility transistors, III-V semiconductors, low-frequency dispersion, network analysers, on-wafer vector large-signal measurements, SiC, silicon compounds, temperature dependent vector large-signal measurements, thermal effects, wide band gap semiconductors|
|Citation count*||1 (2018-06-14)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.