Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC

Piotr Caban , Włodek Strupinski , Jan Szmidt , Marek Wójcik , Jarosław Gaca , Ozgur Kelekci , Deniz Caliskan , Ekmel Ozbay


The influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4H–SiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact on the surface roughness of epilayers and their crystal quality. GaN coalescence thicknesses were determined for the investigated growth pressures. The GaN layers were characterized by AFM and HRXRD measurements. HEMT structures were also fabricated and characterized. Among the growth pressures studied, 50, 125 and 200 mbar, 200 mbar was found to be most suitable for GaN/SiC epitaxy.
Author Piotr Caban IMiO
Piotr Caban,,
- The Institute of Microelectronics and Optoelectronics
, Włodek Strupinski
Włodek Strupinski,,
, Jan Szmidt IMiO
Jan Szmidt,,
- The Institute of Microelectronics and Optoelectronics
, Marek Wójcik
Marek Wójcik,,
, Jarosław Gaca
Jarosław Gaca,,
, Ozgur Kelekci
Ozgur Kelekci,,
, Deniz Caliskan
Deniz Caliskan,,
, Ekmel Ozbay
Ekmel Ozbay,,
Journal seriesJournal of Crystal Growth, ISSN 0022-0248
Issue year2011
Keywords in EnglishA1. Defects, A1. High resolution X-ray diffraction, A1. Nucleation, A3. Low pressure metalorganic vapor phase epitaxy, B1. Nitrides, B3. High electron mobility transistors
URL http://www.sciencedirect.com/science/article/pii/S0022024810006846
Languageen angielski
Score (nominal)25
Publication indicators WoS Impact Factor [Impact Factor WoS]: 2011 = 1.726 (2) - 2011=1.71 (5)
Citation count*2 (2015-05-30)
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