Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC
Piotr Caban , Włodek Strupinski , Jan Szmidt , Marek Wójcik , Jarosław Gaca , Ozgur Kelekci , Deniz Caliskan , Ekmel Ozbay
AbstractThe influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4H–SiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact on the surface roughness of epilayers and their crystal quality. GaN coalescence thicknesses were determined for the investigated growth pressures. The GaN layers were characterized by AFM and HRXRD measurements. HEMT structures were also fabricated and characterized. Among the growth pressures studied, 50, 125 and 200 mbar, 200 mbar was found to be most suitable for GaN/SiC epitaxy.
|Journal series||Journal of Crystal Growth, ISSN 0022-0248|
|Keywords in English||A1. Defects, A1. High resolution X-ray diffraction, A1. Nucleation, A3. Low pressure metalorganic vapor phase epitaxy, B1. Nitrides, B3. High electron mobility transistors|
|Publication indicators||: 2011 = 1.726 (2) - 2011=1.71 (5)|
|Citation count*||2 (2015-05-30)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.