Defect levels in CuGaSe2 by modulated photocurrent spectroscopy

Adam Krysztopa , Małgorzata Igalson , Paweł Zabierowski , J. Larsen , Y. Aida , S. Siebentritt , L. Gütay

Abstract

Results of high frequency modulated photocurrent spectroscopy (HF MPC) performed on epitaxial and polycrystalline CuGaSe2 thin films are presented. Frequency and temperature scans of MPC in the high frequency regime are compared, and the advantages of the second mode of measurement over the first one are demonstrated. Electronic parameters of defect levels in Cu-rich and Ga-rich stoichiometry are obtained and discussed in comparison to the literature data on defect levels derived from capacitance junction techniques. An attempt to correlate levels observed by MPC technique with material stoichiometry has been made.
Author Adam Krysztopa (FP / SD)
Adam Krysztopa,,
- Semiconductors Division
, Małgorzata Igalson (FP / SD)
Małgorzata Igalson,,
- Semiconductors Division
, Paweł Zabierowski (FP / SD)
Paweł Zabierowski,,
- Semiconductors Division
, J. Larsen
J. Larsen,,
-
, Y. Aida
Y. Aida,,
-
, S. Siebentritt
S. Siebentritt,,
-
, L. Gütay
L. Gütay,,
-
Journal seriesThin Solid Films, ISSN 0040-6090, (A 30 pkt)
Issue year2011
Vol519
No21
Pages7308-7311
Keywords in EnglishCIGS, Defect levels, Photocurrent
ASJC Classification2505 Materials Chemistry; 2506 Metals and Alloys; 2508 Surfaces, Coatings and Films; 3110 Surfaces and Interfaces; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1016/j.tsf.2010.12.106
URL http://www.sciencedirect.com/science/article/pii/S0040609010017372
Languageen angielski
Score (nominal)30
Score sourcejournalList
Publication indicators WoS Citations = 6; Scopus SNIP (Source Normalised Impact per Paper): 2011 = 1.323; WoS Impact Factor: 2011 = 1.89 (2) - 2011=2.014 (5)
Citation count*9 (2015-05-06)
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