Sticking coefficient of hydrogen radicals on ArF photoresist estimated by parallel plate structure in conjunction with numerical analysis
A Malinowski , M Sekine , M Hori , K Ishikawa , H Kondo , T. Suzuki , T. Takeuchi , H Yamamoto , Andrzej Jakubowski , Lidia Łukasiak , D Tomaszewski
AbstractInvestigation of radicals kinetic behavior and estimation of radical sticking coefficient become indispensable for establishing plasma processing control by its internal parameters. This approach is required for plasma processing of single-nanometer gate length field effect transistors and 3-dimensional gates in particular. In our works we have developed new technique for radicals kinetic behavior investigation and its sticking coefficient estimation. Our approach is based on application of parallel plate structure in conjunction with numerical analysis. This approach allows for radicals behavior investigation apart from ions and ultraviolet photons. Moreover this approach allows for analysis role of radical direct and indirect fluxes. By comparison of measured profile thickness and simulated stuck radicals profile we were able to estimate hydrogen radical sticking probability to ArF photoresist.
|Book||2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2011|
|Keywords in English||ArF photoresist, H, hydrogen, hydrogen radical sticking coefficient estimation, hydrogen radical sticking probability, numerical analysis, parallel plate structure, photoresists, plasma processing control, plates (structures), probability, radicals kinetic behavior, single-nanometer gate length field effect transistors, three-dimensional gates, ultraviolet photons|
|Publication indicators||= 1|
|Citation count*||1 (2015-11-09)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.