TiAl-based ohmic contacts on p-type SiC

Marcin Myśliwiec , Mariusz Sochacki , Ryszard Kisiel , M Guziewicz , M Wzorek

Abstract

Titanium-aluminum alloys were successfully used to form low resistance ohmic contacts to p-type SiC. This work concerns two Al-Ti alloy compositions. Contacts were prepared by magnetron sputtering of bilayer Al-Ti and trilayer Ti-Al-Ti thin films and rapid thermal annealing at temperatures range 900 \#x00B0;C \#x00F7; 1000 \#x00B0;C. Using scanning electron microscopy and profiler, an investigation of surface morphology of annealed contacts was conducted. The best resistivity of 5.8 \#x00B7;10-5 \#x03A9;cm2 was attained on 100nm/26nm Al/Ti metallization of 80\% at. Al alloy composition annealed at 1000 \#x00B0;C for 2 min. Relatively low roughness of 30 nm was observed on trilayer Ti/Al/Ti metallization.
Author Marcin Myśliwiec IMiO
Marcin Myśliwiec,,
- The Institute of Microelectronics and Optoelectronics
, Mariusz Sochacki IMiO
Mariusz Sochacki,,
- The Institute of Microelectronics and Optoelectronics
, Ryszard Kisiel
Ryszard Kisiel,,
-
, M Guziewicz
M Guziewicz,,
-
, M Wzorek
M Wzorek,,
-
Pages68-72
Book 2011 34th International Spring Seminar on Electronics Technology (ISSE), 2011, ISBN 9781457721113, 677 p.
Keywords in Englishaluminium alloys, bilayer thin films, contact resistance, crystal morphology, electrical resistivity, low resistance ohmic contacts, magnetron sputtering, metallic thin films, metallisation, metallization, ohmic contacts, profiling, rapid thermal annealing, resistivity, roughness, scanning electron microscopy, semiconductor-metal boundaries, SiC, silicon compounds, sputter deposition, surface morphology, surface roughness, temperature 900 degC to 1000 degC, TiAl, Ti-Al-Ti, time 2 min, titanium alloys, trilayer thin films, wide band gap semiconductors
DOIDOI:10.1109/ISSE.2011.6053552
URL isse2011.fei.tuke.sk
Languageen angielski
Score (nominal)10
Citation count*8 (2018-06-18)
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