Determination of border/bulk traps parameters based on (C - G - V) admittance measurements

Andrzej Igor Mazurak , Jakub Maciej Jasiński , Bogdan Majkusiak

Abstract

Admittance parameters analysis can give useful information on border and bulk traps, including the traps located at the inner interface inside high-k gate stacks. The authors present a theoretical model of the high-k dielectric based MIS tunnel diode that comprises the small-signal response of the traps. The traps are charged and discharged not only by charge exchange with the substrate but also by tunnel currents between the traps and the gate electrode. The assumption of tunnel communication between the traps and the gate electrode enables arbitrary traps geometric distribution and makes the model valid not only for surface and border traps but also for the bulk ones, including traps located at the inner interface inside the gate stack. The small-signal equivalent circuit of the considered MIS structure is transformed into series (CSm, RSm) and parallel (CPm, GPm) depictions, which are commonly used in admittance measurements (C-G-V). The comparison between simulation results and measurement data may be used to determine the trap parameters in the investigated device as it is presented in the paper.

Author Andrzej Igor Mazurak (FEIT / MO)
Andrzej Igor Mazurak,,
- The Institute of Microelectronics and Optoelectronics
, Jakub Maciej Jasiński (FEIT / MO)
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, ISSN 2166-2754, (0 pkt)
Issue year2019
Vol37
No3
Pages1-9
Article number032904
ASJC Classification2505 Materials Chemistry; 2208 Electrical and Electronic Engineering; 2508 Surfaces, Coatings and Films; 1508 Process Chemistry and Technology; 3105 Instrumentation; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1116/1.5060674
URL https://avs.scitation.org/doi/10.1116/1.5060674
project[V4-Japan/01/NaMSeN/02/2015 POLON] Nanophotonics with metal – group-IV-semiconductor nanocomposites: From single nanoobjects to functional ensembles. Project leader: Beck Romuald, , Phone: (+48) 22 234 75 34, application date 29-09-2015, start date 01-02-2016, planned end date 31-01-2019, IMIO/2016/Japan, Implemented
WEiTI Projekty finansowane przez MNiSW
xxx. Project leader: Beck Romuald, , Phone: (+48) 22 234 75 34, application date 22-12-2011, start date 30-08-2012, planned end date 29-08-2015, IMiO/2011/NCN/5, Implemented
WEiTI Projects financed by NSC [Projekty finansowane przez NCN]
Languageen angielski
Score (nominal)5
ScoreMinisterial score = 5.0, 19-07-2019, ArticleFromJournal
Publication indicators Scopus Citations = 0; Scopus SNIP (Source Normalised Impact per Paper): 2017 = 0.631
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