Broad-area semiconductor lasers with modulated reflectivity of the mirrors

Michał Szymański , Jacek M Kubica , Paweł Szczepański , Bohdan Mroziewicz

Abstract

We provide results of the theoretical analysis of guided lateral mode in broad-area (BA) semiconductor lasers with modal reflectors formed by patterning the reflectivity of the front facet. The analysis has been performed by using a simple model based on the effective index method and the concept of the effective facet reflectivity. The numerical results include mode threshold conditions and far-field patterns of the lasing modes for various reflector configurations.
Author Michał Szymański - [Instytut Technologii Elektronowej]
Michał Szymański,,
-
-
, Jacek M Kubica - [Warsaw University of Technology (PW)]
Jacek M Kubica,,
-
- Politechnika Warszawska
, Paweł Szczepański (FEIT / MO)
Paweł Szczepański,,
- The Institute of Microelectronics and Optoelectronics
, Bohdan Mroziewicz - [Instytut Technologii Elektronowej]
Bohdan Mroziewicz,,
-
-
Corporate authorInstitute of Microelectronics and Optoelectronisc (IMiO)
Pages339-346
Book Woliński Wiesław, Malinowski Michał (eds.): Proceedings of SPIE Laser Technology V: Physics and Research and Development Trends, vol. 3186, 1997, P.O. Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819426024, 448 p.
DOIDOI:10.1117/12.280514
URL http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=931421
Languageen angielski
Score (nominal)0
Publication indicators Scopus Citations = 0; WoS Citations = 0
Citation count*
Cite
Share Share

Get link to the record


* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
Back
Confirmation
Are you sure?