Broad-area semiconductor lasers with modulated reflectivity of the mirrors
Michał Szymański , Jacek M Kubica , Paweł Szczepański , Bohdan Mroziewicz
AbstractWe provide results of the theoretical analysis of guided lateral mode in broad-area (BA) semiconductor lasers with modal reflectors formed by patterning the reflectivity of the front facet. The analysis has been performed by using a simple model based on the effective index method and the concept of the effective facet reflectivity. The numerical results include mode threshold conditions and far-field patterns of the lasing modes for various reflector configurations.
|Corporate author||Institute of Microelectronics and Optoelectronisc (IMiO)|
|Book||Woliński Wiesław, Malinowski Michał (eds.): Proceedings of SPIE Laser Technology V: Physics and Research and Development Trends, vol. 3186, 1997, P.O. Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819426024, 448 p.|
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