Electrical characterization of a RF power transistor ceramic package including multiple wirebonds

Paweł Kopyt

Abstract

This article presents an approach for modeling of RF power transistor packages including bondwires. The approach is based on measurements of a real package in which the transistor chip was replaced with a 2-port of known parameters and connected to the package leads with multiple parallel wirebonds. Using the measurement results, an equivalent circuit of the package is constructed. The response of the circuit is then compared to measurements and results obtained through full-wave electromagnetic modeling to reveal good agreement. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.
Author Paweł Kopyt (FEIT / RE)
Paweł Kopyt,,
- The Institute of Radioelectronics
Journal seriesInternational Journal of Rf and Microwave Computer-Aided Engineering, ISSN 1096-4290, [1099-047X]
Issue year2013
Vol23
No1
Pages52–58
Keywords in Englishcoupled wirebonds, equivalent circuit model, multiple wirebonds, power transistors, semiconductor device packaging
ASJC Classification2208 Electrical and Electronic Engineering; 1704 Computer Graphics and Computer-Aided Design; 1706 Computer Science Applications
DOIDOI:10.1002/mmce.20650
URL http://onlinelibrary.wiley.com/doi/10.1002/mmce.20650/abstract
Languageen angielski
Score (nominal)20
Score sourcejournalList
ScoreMinisterial score = 15.0, 07-01-2020, ArticleFromJournal
Ministerial score (2013-2016) = 20.0, 07-01-2020, ArticleFromJournal
Publication indicators WoS Citations = 1; Scopus Citations = 1; GS Citations = 3.0; Scopus SNIP (Source Normalised Impact per Paper): 2013 = 0.639; WoS Impact Factor: 2013 = 0.845 (2) - 2013=0.667 (5)
Citation count*3 (2015-02-22)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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