Defect levels in Cu(In,Ga)Se2 studied using capacitance and photocurrent techniques

Aleksander Urbaniak , Karolina Macielak , Małgorzata Igalson , P. Szaniawski , M. Edoff


This work contributes to the discussion on defect levels in Cu(In,Ga)Se2 photovoltaic material. CuInSe2- and Cu(In,Ga)Se2- based Schottky junctions, solar cells and thin films were investigated using complementary capacitance and current spectroscopic techniques. Depending on the applied technique and type of investigated structure, six different signals were observed. Out of the signals identified, three were ascribed to responses from bulk defects - two electron and one hole trap. The remainder were discussed in light of available in-literature models including carrier mobility freeze-out and non-ohmic back junction. © 2016 IOP Publishing Ltd.
Author Aleksander Urbaniak (FP / SD)
Aleksander Urbaniak,,
- Semiconductors Division
, Karolina Macielak (FP / SD)
Karolina Macielak,,
- Semiconductors Division
, Małgorzata Igalson (FP / SD)
Małgorzata Igalson,,
- Semiconductors Division
, P. Szaniawski
P. Szaniawski,,
, M. Edoff
M. Edoff,,
Journal seriesJournal of Physics-Condensed Matter, ISSN 0953-8984, [1361-648X]
Issue year2016
Publication size in sheets0.5
ASJC Classification3104 Condensed Matter Physics; 2500 General Materials Science
Languageen angielski
Score (nominal)30
Score sourcejournalList
ScoreMinisterial score = 30.0, 01-02-2020, ArticleFromJournal
Ministerial score (2013-2016) = 30.0, 01-02-2020, ArticleFromJournal
Publication indicators Scopus Citations = 6; WoS Citations = 3; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 0.938; WoS Impact Factor: 2016 = 2.649 (2) - 2016=2.305 (5)
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