Three-phase grid inverter with SiC JFETs and Schottky diodes
- Jacek Rąbkowski,
- Roman Barlik
This paper describes design, construction and tests of 2 kVA three-phase current source inverter with silicon carbide (SiC) JFETs and Schottky diodes. Low on-resistance and switching energies of SiC JFET lead to switching frequency increase to 100 kHz. In result size and weight of inverter is reduced. Operation of 2 kVA model is illustrated by laboratory results - measured efficiency at nominal conditions was 96,55\%.
- Record ID
- Mixed Design of Integrated Circuits Systems, 2009. MIXDES '09. MIXDES-16th International Conference, 2009
- Keywords in English
- current source inverter, invertors, junction gate field effect transistors, Schottky diodes, SiC JFET, Silicon Carbide, three-phase grid inverter
- Score (nominal)
- Publication indicators
- = 16; = 16; = 15
- Citation count
- Uniform Resource Identifier
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