Bulk GaN single-crystals growth
Grzegorz Kamler , Janusz Zachara , Sławomir Podsiadło , Leszek Adamowicz , Wojciech Gębicki
AbstractGallium nitride powder was prepared from gallium and ammonia at temperatures of 1000–1200°C. Parameters of the crystallographic lattice as well as photoluminescence and Raman spectra were determined for the obtained powder. As a result of GaN powder sublimation, GaN single crystals of 3×2×0.2 mm were received, at temperatures 1200–1250°C. Single crystals of gallium nitride were also synthesised in a reaction of gallium vapours with ammonia. Crystals up to 1.5×1×0.1 mm were obtained at the temperature range of 850–1150°C. The obtained single crystals were studied by X-ray methods resulting in structure refining, mapping of reflexes and rocking curves. In addition, Raman spectroscopy studies and conductivity measurements were carried out. It was also demonstrated that the crystallographic structure of the crystals and powders was well pronounced. Homoepitaxial GaN films of several tens of micrometers were deposited onto selected GaN single crystals. The influence of grain size on the GaN sublimation process was studied. The 50–500 μm GaN crystalline powder sublimation resulted in the growth of single crystals whose quality was significantly better in comparison to effects of the sublimation of a few micrometer crystalline powder.
|Journal series||Journal of Crystal Growth, ISSN 0022-0248|
|Keywords in English||Bulk crystal growth, Gallium nitride, Raman spectra, Vapour-phase crystal growth|
|ASJC Classification||; ;|
|Publication indicators||= 45; = 52.0; : 2000 = 1.046; : 2006 = 1.809 (2) - 2007=1.789 (5)|
|Citation count*||52 (2015-04-26)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.