Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy

Miftahul Anwar , Roland Nowak , Daniel Moraru , Arief Udhiarto , Takeshi Mizuno , Ryszard Jabłoński , Michiharu Tabe

Abstract

We have comparatively studied the effects of electron injection in individual phosphorus-donor potential wells at 13 \#x2009;K and 300 \#x2009;K by Kelvin probe force microscopy in silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. As a result, at 13 \#x2009;K, localized single-electron filling into the phosphorus-donor potential well is found, reflecting single-electron tunneling transport through individual donors, whereas at 300 \#x2009;K, spatially extended and continuous electron filling over a number of phosphorus-donors is observed, reflecting drift-diffusion transport.
Author Miftahul Anwar
Miftahul Anwar,,
-
, Roland Nowak (FM / IMBE)
Roland Nowak,,
- The Institute of Metrology and Biomedical Engineering
, Daniel Moraru
Daniel Moraru,,
-
, Arief Udhiarto
Arief Udhiarto,,
-
, Takeshi Mizuno
Takeshi Mizuno,,
-
, Ryszard Jabłoński (FM / IMBE)
Ryszard Jabłoński,,
- The Institute of Metrology and Biomedical Engineering
, Michiharu Tabe
Michiharu Tabe,,
-
Journal seriesApplied Physics Letters, ISSN 0003-6951, (A 40 pkt)
Issue year2011
Vol99
No21
Pages213101-213101-3
Keywords in Polishstudnia potencjału, kelvinowski mikroskop sił atomowych, krzem\ na izolatorze, MOSFET
Keywords in Englishatomic force microscopy, impurity states, MOSFET, Phosphorus, silicon-on-insulator, single electron devices
ASJC Classification3101 Physics and Astronomy (miscellaneous)
DOIDOI:10.1063/1.3663624
Languageen angielski
Score (nominal)40
Score sourcejournalList
Publication indicators WoS Citations = 16; Scopus SNIP (Source Normalised Impact per Paper): 2011 = 1.925; WoS Impact Factor: 2011 = 3.844 (2) - 2011=3.787 (5)
Citation count*18 (2016-01-06)
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