Investigation of InGaAs p-i-n photodiode for optical-microwave mixing process
Jerzy Piotrowski , Bogdan Galwas , S.A. Malysev , V.F. Andrievski
AbstractAn InGaAs p-i-n photodiode, operating at 1.3 mu;m has been fabricated and used in an optical-microwave mixer configuration. The DC characteristics, diode capacitance for various incident optical power as well as frequency dependence of responsivity and reflection coefficient up to 3 GHz were investigated. Bias and local oscillator power level dependence of optical-microwave mixing process is reported and discussed
|Book||, 12th International Conference on Microwaves and Radar, 1998. MIKON '98, 1998|
|Keywords in English||1.3 micron, 3 GHz, bias level dependence, capacitance, DC characteristics, diode capacitance, frequency dependence, gallium arsenide, III-V semiconductors, incident optical power, indium compounds, InGaAs, InGaAs p-i-n photodiode, local oscillator power level, LO power level dependence, microwave mixers, microwave photonics, optical frequency conversion, optical-microwave mixing process, optical receivers, photodetectors, PIN photodiode, p-i-n photodiodes, reflection coefficient, responsivity, subcarrier multiplexing|
|Citation count*||9 (2014-12-18)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.