Investigation of InGaAs p-i-n photodiode for optical-microwave mixing process

Jerzy Piotrowski , Bogdan Galwas , S.A. Malysev , V.F. Andrievski

Abstract

An InGaAs p-i-n photodiode, operating at 1.3 mu;m has been fabricated and used in an optical-microwave mixer configuration. The DC characteristics, diode capacitance for various incident optical power as well as frequency dependence of responsivity and reflection coefficient up to 3 GHz were investigated. Bias and local oscillator power level dependence of optical-microwave mixing process is reported and discussed
Author Jerzy Piotrowski IMiO
Jerzy Piotrowski,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Galwas IMiO
Bogdan Galwas,,
- The Institute of Microelectronics and Optoelectronics
, S.A. Malysev
S.A. Malysev,,
-
, V.F. Andrievski
V.F. Andrievski,,
-
Pages171-175 vol.1
Book , 12th International Conference on Microwaves and Radar, 1998. MIKON '98, 1998
Keywords in English1.3 micron, 3 GHz, bias level dependence, capacitance, DC characteristics, diode capacitance, frequency dependence, gallium arsenide, III-V semiconductors, incident optical power, indium compounds, InGaAs, InGaAs p-i-n photodiode, local oscillator power level, LO power level dependence, microwave mixers, microwave photonics, optical frequency conversion, optical-microwave mixing process, optical receivers, photodetectors, PIN photodiode, p-i-n photodiodes, reflection coefficient, responsivity, subcarrier multiplexing
DOIDOI:10.1109/MIKON.1998.737941
Languageen angielski
Score (nominal)3
Citation count*9 (2014-12-18)
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