MOS transistor as a current-controlled device

Wiesław Kuźmicz

Abstract

In analog design MOS transistors are treated as “insulated gate” devices, i.e. devices with zero DC input current. In the era of deep submicron technologies this assumption is no longer valid. In transistors with ultra-thin gate oxide gate tunneling current is no longer negligible, and the gate current can be treated as the input signal. In this paper the properties of a MOS transistor as a current-controlled device are investigated. A “quasi-Darlington” configuration of two MOS devices is proposed and its applications to simple amplifier stages is discussed.
Author Wiesław Kuźmicz IMiO
Wiesław Kuźmicz,,
- The Institute of Microelectronics and Optoelectronics
Pages223-228
Publication size in sheets0.5
Book Napieralski Andrzej (eds.): Proceedings of 23rd International Conference Mixed Design of Integrated Circuits and Systems MIXDES 2016, vol. CFP16MIX-CDR, 2016, Lodz University of Technology, Department of Microelectronics and Computer Science, ISBN 978-83-63578-08-4, 538 p.
Keywords in EnglishCMOS; MOS transistor; analog circuits; gate tunneling current
DOIDOI:10.1109/MIXDES.2016.7529736
URL http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7529736
projectThe Development of Design, Processing and Testing Methods of the Electronic Devices and Materials for Microelectronics and Optoelectronics. Project leader: Szczepański Paweł, , Phone: (48 22) 234 58 70, start date 01-01-2015, planned end date 31-12-2015, end date 31-05-2016, IMiO/2015/STATUT/1, Implemented
WEiTI Działalność statutowa
Languageen angielski
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WK_ MIXDES2016.pdf (file archived - login or check accessibility on faculty) WK_ MIXDES2016.pdf 1.04 MB
CopyrightTransferForm.pdf / 738.52 KB / CopyrightTransferForm.pdf 738.52 KB
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 27-03-2017, BookChapterMatConfByIndicator
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