Characterization thin films TiO2 obtained in the magnetron sputtering process

Maciej Kamiński , Piotr Firek , Piotr Caban


The aim of the study was to elucidate influence parameters of magnetron sputtering process on growth rate and quality of titanium dioxide thin films. TiO2 films were produced on two inch silicon wafers by means of magnetron sputtering method. Characterization of samples was performed using ellipsometer and atomic force microscope (AFM). Currentvoltage (I-V) and capacitance-voltage (C-V) measurements were also carried out. The results enable to determine impact of pressure, power, gases flow and process duration on the physical parameters obtained layers such as electrical permittivity, flat band voltage and surface topography. Experiments were designed according to orthogonal array Taguchi method. Respective trends impact were plotted.
Author Maciej Kamiński (FEIT / MO)
Maciej Kamiński,,
- The Institute of Microelectronics and Optoelectronics
, Piotr Firek (FEIT / MO)
Piotr Firek,,
- The Institute of Microelectronics and Optoelectronics
, Piotr Caban - [Instytutu Technologii Materialow Elektronicznych w Warszawie]
Piotr Caban,,
Book Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351
Keywords in EnglishSputter deposition; Thin films; Titanium; Atomic force microscope; Capacitance; Gases; Silicon
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 15.0, 31-12-2019, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 31-12-2019, BookChapterMatConfByIndicator
Publication indicators Scopus Citations = 0; WoS Citations = 0
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Numer pracy1017516
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