Ambipolar organic thin film transistors prepared with alone step solution technique

Izabela Frac , Magdalena Kucinska , Paweł Gawryś , Małgorzata Zagórska , Waldemar Maniukiewicz , Andrzej Nosal , Jacek Ulański , Maciej Gazicki-Lipman

Abstract

One of the most challenging problems limiting the development of the technology of organic electronics is a lack of simple, solution based, techniques for producing organic thin film transistors (OTFTs) with ambipolar characteristics. In this work, a simple method of manufacturing ambipolar OTFTs, based on a zone-casting technique, is presented. This technique was used to prepare thin and highly oriented films from a combination of the p-type organic semiconductor, TIPS-Pentacene, with one of the two naphthalene bisimide derivatives, both exhibiting electron conductivity. The OTFTs produced with such active layers display ambipolar properties with symmetric characteristics and electron and hole mobility in the best case amounting to: μe = 1.5 × 10-2 and μh = 1.1 × 10-2 cm2 V-1 s-1, respectively. © 2016 Elsevier B.V. All rights reserved.
Author Izabela Frac - Politechnika Łódzka
Izabela Frac,,
-
, Magdalena Kucinska - Politechnika Łódzka
Magdalena Kucinska,,
-
, Paweł Gawryś KChTP
Paweł Gawryś,,
- Chair Of Polymer Chemistry And Technology
, Małgorzata Zagórska KChTP
Małgorzata Zagórska,,
- Chair Of Polymer Chemistry And Technology
, Waldemar Maniukiewicz - Politechnika Łódzka
Waldemar Maniukiewicz,,
-
, Andrzej Nosal - Politechnika Łódzka
Andrzej Nosal,,
-
, Jacek Ulański - Politechnika Łódzka
Jacek Ulański,,
-
, Maciej Gazicki-Lipman - Politechnika Łódzka
Maciej Gazicki-Lipman,,
-
Journal seriesSynthetic Metals, ISSN 0379-6779
Issue year2016
Vol220
Pages194-201
Publication size in sheets0.5
Keywords in EnglishField effect transistors; Hole mobility; Naphthalene; Semiconducting organic compounds; Thin films; Transistors, Ambipolar; Ambipolar characteristics; Organic thin film transistor (OTFTs); Organic thin film transistors; p-Type organic semiconductors; Parylene C; TIPS-pentacene; Zone-casting technique, Thin film transistors
DOIDOI:10.1016/j.synthmet.2016.05.025
URL http://www.sciencedirect.com/science/article/pii/S0379677916301655
Languageen angielski
File
wdpb_publikacje_pliki_plik_publikacja_2880_org.pdf 1.5 MB
Score (nominal)30
ScoreMinisterial score = 30.0, 28-11-2017, ArticleFromJournal
Ministerial score (2013-2016) = 30.0, 28-11-2017, ArticleFromJournal
Publication indicators WoS Impact Factor: 2016 = 2.435 (2) - 2016=2.165 (5)
Citation count*0
Cite
Share Share

Get link to the record
msginfo.png


* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
Back