Light induced modification of graphene oxide layers on GaN basis
Aleksandra Łobion , Leszek Stobiński , K. Pakuła , R. Bożek , P. Kaźmierczak , A. Wysmołek , R. Stępniewski
AbstractGraphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.
|Journal series||Acta Physica Polonica A, ISSN 0587-4246|
|Publication size in sheets||0.3|
|Conference||45th International School and Conference on the Physics of Semiconductors (Jaszowiec 2016), 18-06-2016 - 24-06-2016, Szczyrk, Polska|
|Score|| = 15.0, 28-11-2017, ArticleFromJournalAndMatConf|
= 15.0, 28-11-2017, ArticleFromJournalAndMatConf
|Publication indicators||: 2016 = 0.469 (2) - 2016=0.489 (5)|
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