Light induced modification of graphene oxide layers on GaN basis

Aleksandra Łobion , Leszek Stobiński , K. Pakuła , R. Bożek , P. Kaźmierczak , A. Wysmołek , R. Stępniewski


Graphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.
Author Aleksandra Łobion
Aleksandra Łobion,,
, Leszek Stobiński (FCPE / GL)
Leszek Stobiński,,
- WUT Grafen Laboratory
, K. Pakuła
K. Pakuła,,
, R. Bożek
R. Bożek,,
, P. Kaźmierczak
P. Kaźmierczak,,
, A. Wysmołek
A. Wysmołek,,
, R. Stępniewski
R. Stępniewski,,
Journal seriesActa Physica Polonica A, ISSN 0587-4246
Issue year2016
Publication size in sheets0.3
Conference45th International School and Conference on the Physics of Semiconductors (Jaszowiec 2016), 18-06-2016 - 24-06-2016, Szczyrk, Polska
Languageen angielski
Łopion A. (i in.) - Light induced modification....pdf 695.67 KB
Score (nominal)15
ScoreMinisterial score = 15.0, 28-11-2017, ArticleFromJournalAndMatConf
Ministerial score (2013-2016) = 15.0, 28-11-2017, ArticleFromJournalAndMatConf
Publication indicators WoS Impact Factor: 2016 = 0.469 (2) - 2016=0.489 (5)
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