Simulation of electrical characteristics of GaN vertical Schottky diodes

Lidia Łukasiak , Jakub Maciej Jasiński , Andrzej Jakubowski

Abstract

Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.
Author Lidia Łukasiak IMiO
Lidia Łukasiak,,
- The Institute of Microelectronics and Optoelectronics
, Jakub Maciej Jasiński IMiO
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
, Andrzej Jakubowski IMiO
Andrzej Jakubowski,,
- The Institute of Microelectronics and Optoelectronics
Pages1-6
Book Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351
Keywords in EnglishDiodes; Gallium nitride; Simulations
DOIDOI:10.1117/12.2260777
URL http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2595265
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Citation count*0
Additional fields
Numer pracy101750B
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