High-temperature properties of Schottky diodes made of silicon carbide

Krzysztof Górecki , Damian Bisewski , Janusz Zarębski , Ryszard Kisiel , Marcin Myśliwiec


Print Request Permissions This paper refers to properties of silicon carbide Schottky diodes at high values of their internal temperature. The investigated diode was elaborated at Warsaw University of Technology. Characteristics of this diode were measured at different cooling conditions in wide range of dissipated power. At each operating point the value of the internal temperature of the investigated diode was measured with the use of the impulse electrical method. On the basis of the obtained results of measurements thermal properties of the considered diode were discussed, as well as the possibility of using such a construction of the diode at very high values of its internal temperature (up to 500µC) was considered.
Author Krzysztof Górecki
Krzysztof Górecki,,
, Damian Bisewski
Damian Bisewski,,
, Janusz Zarębski
Janusz Zarębski,,
, Ryszard Kisiel (FEIT / MO)
Ryszard Kisiel,,
- The Institute of Microelectronics and Optoelectronics
, Marcin Myśliwiec (FEIT / MO)
Marcin Myśliwiec,,
- The Institute of Microelectronics and Optoelectronics
Publication size in sheets0.5
Book Napieralski Andrzej (eds.): Proceedings of 23rd International Conference Mixed Design of Integrated Circuits and Systems MIXDES 2016, vol. CFP16MIX-CDR, 2016, Wólczańska 221/223, 90-924 Łódź, Poland, Lodz University of Technology, Department of Microelectronics and Computer Science, ISBN 978-83-63578-08-4, 538 p.
Keywords in EnglishSiC Schottky diodes; electronic cooling; thermal parameters; thermal phenomena
URL http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7529770
ProjectThe Development of Design, Processing and Testing Methods of the Electronic Devices and Materials for Microelectronics and Optoelectronics. Project leader: Szczepański Paweł, , Phone: (48 22) 234 58 70, start date 01-01-2015, planned end date 31-12-2015, end date 31-05-2016, IMiO/2015/STATUT/1, Implemented
WEiTI Działalność statutowa
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 15.0, 01-02-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 01-02-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 2
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