Investigation of double barrier MOS tunnel diodes with PECVD silicon quantum well

Bogdan Majkusiak , Romuald B. Beck , Andrzej Igor Mazurak , Jarosław Grabowski

Abstract

Double barrier metal–oxide–semiconductor tunnel diodes with ultrathin PECVD Si and thermal SiO2 layers were fabricated. The measured capacitance–voltage and current–voltage characteristics were interpreted and physical parameters of the structures were extracted by means of a theoretical model.
Author Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
, Romuald B. Beck (FEIT / MO)
Romuald B. Beck,,
- The Institute of Microelectronics and Optoelectronics
, Andrzej Igor Mazurak (FEIT / MO)
Andrzej Igor Mazurak,,
- The Institute of Microelectronics and Optoelectronics
, Jarosław Grabowski (FEIT / MO)
Jarosław Grabowski,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesMicroelectronics Reliability, (A 20 pkt)
Issue year2011
Vol51
No7
Pages1172-1177
Publication size in sheets0.5
ASJC Classification2208 Electrical and Electronic Engineering; 2508 Surfaces, Coatings and Films; 2213 Safety, Risk, Reliability and Quality; 3104 Condensed Matter Physics; 3107 Atomic and Molecular Physics, and Optics; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1016/j.microrel.2011.03.018
URL https://www.sciencedirect.com/science/article/pii/S0026271411000941
Languageen angielski
Score (nominal)20
Publication indicators Scopus Citations = 4; WoS Citations = 4; Scopus SNIP (Source Normalised Impact per Paper): 2014 = 1.432; WoS Impact Factor: 2011 = 1.167 (2) - 2011=1.212 (5)
Citation count*4 (2020-01-26)
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