Investigation of double barrier MOS tunnel diodes with PECVD silicon quantum well
Bogdan Majkusiak , Romuald B. Beck , Andrzej Igor Mazurak , Jarosław Grabowski
AbstractDouble barrier metal–oxide–semiconductor tunnel diodes with ultrathin PECVD Si and thermal SiO2 layers were fabricated. The measured capacitance–voltage and current–voltage characteristics were interpreted and physical parameters of the structures were extracted by means of a theoretical model.
|Journal series||Microelectronics Reliability, (A 20 pkt)|
|Publication size in sheets||0.5|
|ASJC Classification||; ; ; ; ;|
|Publication indicators||= 4; = 4; : 2014 = 1.432; : 2011 = 1.167 (2) - 2011=1.212 (5)|
|Citation count*||4 (2020-01-26)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.