Electronic properties of BaTiO3/4H-SiC interface
Mariusz Sochacki , Piotr Firek , Norbert Kwietniewski , Jan Szmidt , Witold Rzodkiewicz
AbstractThe possibility of barium titanate (BaTiO3) application in silicon carbide (SiC) technology has been elaborated in terms of the dielectric film quality and properties of the BaTiO3/4H-SiC interface. High resistivity, high-k thin films containing La2O3 admixture were applied as gate insulator of metal-insulator-semiconductor (MIS) structure. The thin films were deposited by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2 wt.%) target on 8° off-axis 4H-SiC (0001) epitaxial layers doped with nitrogen. The results of current-voltage and capacitance-voltage measurements are presented for MIS capacitors.
|Journal series||Materials Science and Engineering B: Advanced Functional Solid-state Materials , ISSN 0921-5107, (A 35 pkt)|
|Publication size in sheets||0.5|
|ASJC Classification||; ; ;|
|Publication indicators||= 4; = 3.0; : 2011 = 1.076; : 2011 = 1.518 (2) - 2011=1.761 (5)|
|Citation count*||3 (2015-01-17)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.