Electronic properties of BaTiO3/4H-SiC interface

Mariusz Sochacki , Piotr Firek , Norbert Kwietniewski , Jan Szmidt , Witold Rzodkiewicz


The possibility of barium titanate (BaTiO3) application in silicon carbide (SiC) technology has been elaborated in terms of the dielectric film quality and properties of the BaTiO3/4H-SiC interface. High resistivity, high-k thin films containing La2O3 admixture were applied as gate insulator of metal-insulator-semiconductor (MIS) structure. The thin films were deposited by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2 wt.%) target on 8° off-axis 4H-SiC (0001) epitaxial layers doped with nitrogen. The results of current-voltage and capacitance-voltage measurements are presented for MIS capacitors.
Author Mariusz Sochacki (FEIT / MO)
Mariusz Sochacki,,
- The Institute of Microelectronics and Optoelectronics
, Piotr Firek (FEIT / MO)
Piotr Firek,,
- The Institute of Microelectronics and Optoelectronics
, Norbert Kwietniewski (FEIT / MO)
Norbert Kwietniewski,,
- The Institute of Microelectronics and Optoelectronics
, Jan Szmidt (FEIT / MO)
Jan Szmidt,,
- The Institute of Microelectronics and Optoelectronics
, Witold Rzodkiewicz - [Instytut Technologii Elektronowej]
Witold Rzodkiewicz,,
Journal seriesMaterials Science and Engineering B: Advanced Functional Solid-state Materials , ISSN 0921-5107, (A 35 pkt)
Issue year2011
Publication size in sheets0.5
ASJC Classification2210 Mechanical Engineering; 2211 Mechanics of Materials; 3104 Condensed Matter Physics; 2500 General Materials Science
URL http://www.sciencedirect.com/science/article/pii/S0921510710005763
Languageen angielski
Score (nominal)35
Score sourcejournalList
Publication indicators Scopus Citations = 4; GS Citations = 3.0; Scopus SNIP (Source Normalised Impact per Paper): 2011 = 1.076; WoS Impact Factor: 2011 = 1.518 (2) - 2011=1.761 (5)
Citation count*3 (2015-01-17)
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